摘要:

Monolithic integration of 1.3‐&mgr;m groove lasers and metal‐insulator‐semiconductor field‐effect transistors (MISFET) is achieved by a simple single liquid phase epitaxy (LPE) growth process. Laser thresholds as low as 14 mA for 300‐&mgr;m cavity length are obtained. MIS depletion mode FET’s withnchannels on LPE grown InP layer show typical transconductance of 5–10 mmho. Laser modulation by the FET current is demonstrated at up to twice the threshold current.

ISSN:0003-6951    

DOI:10.1063/1.93226

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

An intensity dependent change from a state of total internal reflection to transmission of an optical beam at a nonlinear glass‐nematic liquid crystal interface is observed. The effect is attributed to optically induced molecular reorientation and thermal indexing, depending on the liquid crystal used.

ISSN:0003-6951    

DOI:10.1063/1.93227

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Competition between three‐photon resonantly enhanced vacuum ultraviolet third‐harmonic generation and six‐photon multiphoton ionization using theAstate in gaseous carbon monoxide is observed. Excitation spectra of the third‐harmonic emission exhibit increasing blue shifts and broadening with increasing pressure due to the phase matching requirements. Estimates for the efficiency and tunability show that third‐harmonic generation in carbon monoxide molecules is a promising source for coherent vacuum ultraviolet light.

ISSN:0003-6951    

DOI:10.1063/1.93228

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Codirectional TE‐TM mode conversion is investigated for the codirectional and contradirectional interaction geometries between optical guided waves and surface acoustic waves in a Ti‐diffused optical waveguide. The acoustic input power required for maximum mode conversion of 20 mW has been achieved for both cases. The conversion center frequencies are closely the same for both configurations.

ISSN:0003-6951    

DOI:10.1063/1.93229

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

An electro‐optic directional coupler switch has been fabricated in InP with an homojunction structure. Each single‐mode guide is made in anlayer grown on an+substrate, thep+etched rib used to confine the light being obtained by diffusion. A linear variation of the coupling length with reciprocal wavelength has been found between 1.06 and 1.51 &mgr;m. By reversely biasing the ’’stepped &Dgr;&bgr;’’ junctions with less than 12 V, both switching states have been achieved at 1.51 &mgr;m, with a power isolation better than 16 dB on a 8‐mm‐long device. This is a new promising step towards InP‐integrated optics.

ISSN:0003-6951    

DOI:10.1063/1.93230

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

A 30‐W cw CO2laser operating on theR(30) 9‐&mgr;m transition is used to pump a ring laser cavity containing NH3. Emission at 12.08 &mgr;m is observed with cw output power of 180 mW. A Raman process is shown to be responsible for the gain at 12.08 &mgr;m.

ISSN:0003-6951    

DOI:10.1063/1.93231

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Data are presented showing that asingleGaAs quantum well as small asLz≲80 A˚ can be operated instimulatedemissionif supplied sufficiently with electrons, which can be done by doping (ND≳Nc). It is shown, via photoluminescence data and an approximate analysis, that the smaller the GaAs well sizeLz(1500, 400, 200, 80 A˚) the greater is the effect of a fixed confining layer doping (ND∼5×1018/cm3) in increasing the quantum‐well carrier population and the luminescence energy.

ISSN:0003-6951    

DOI:10.1063/1.93232

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

We report tunable cw mode‐locked laser action from synchronously pumped InGaAsP lasers with an output power of 2 mW. Nearly bandwidth‐limited pulses of 6‐ps duration have also been obtained using a mechanically chopped pump beam. 2–5‐&mgr;m‐thick LPE quaternary layers lasing at 1.1 and 1.2 &mgr;m are longitudinally pumped by a Kr+laser. Peak output powers of greater than 25 W, tunable over a 25‐nm range, can be achieved. Unmode‐locked operation has also been accomplished.

ISSN:0003-6951    

DOI:10.1063/1.93218

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

A new optical storage medium is described which consists of a Ge film microscopically textured by reactive ion etching. The Ge surface, with a random array of decoupled columns of cross‐sectional dimensions less than 100 nm, has a visible specular reflectance of less than 0.06. Reflective spots ∼1 &mgr;m in diameter have been produced on this surface by local heating with a low power laser beam. The fabrication, microstructure, and possibility of encapsulating the medium are discussed.

ISSN:0003-6951    

DOI:10.1063/1.93219

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

This letter reports a piezoelectric‐translator‐tuned, short‐cavity picosecond dye laser. This laser, pumped by second or third harmonic picosecond pulses from a mode‐locked Nd+3: glass laser, has been operated at cavity lengths which allow only a single longitudinal mode within the lasing bandwidth of a typical dye gain curve. By varying the cavity length with the piezoelectric translator, the output wavelength has been continuously tuned. With different mirror sets and dyes, the lasing output can be varied across the visible spectrum. The laser output is characterized by a modewidth of 0.3 nm (multimode) and 1.5 nm (single mode). The energy conversion efficiency was found to be roughly 0.3% for single‐mode operation and ≳3% for multimode operation at 600 nm.

ISSN:0003-6951    

DOI:10.1063/1.93220

出版商:AIP    

年代:1982

数据来源: AIP