摘要:

An optical image scanning method using the longitudinal acoustoelectric effect by surface waves in the coupledp‐Si/LiNbO3system is described. By means of the coupling between electrons in a weak inversion layer and surface waves (frequency, 87 MHz; time duration, 400 nsec), a resolution of 2 lines/mm can be obtained.

ISSN:0003-6951    

DOI:10.1063/1.1654941

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

We report acousto‐optic diffraction modulation of a guided optical wave in LiNbO3by an acoustic surface wave. 250 mW of acoustic power produces 100% modulation of the zero‐order beam.

ISSN:0003-6951    

DOI:10.1063/1.1654942

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Sequential two‐dimensional photographs of a laser‐produced plasma in air with effective individual exposure times of [inverted lazy s] 5 psec have been obtained by utilizing a focal‐plane optical Kerr effect shutter.

ISSN:0003-6951    

DOI:10.1063/1.1654943

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

A new technique has been developed for the production of tightly focused intense relativistic electron beams. A collimated plume of laser blowoff plasma is injected on axis into the anode‐cathode gap region of a low‐impedance diode prior to the beam pulse. The electron beam is found to pinch in the diode to current densities ≥ 2 MA/cm2.

ISSN:0003-6951    

DOI:10.1063/1.1654944

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

The space‐charge depression of the potential within an unneutralized relativistic electron beam limits the beam current. Calculations of this effect are presented for an annular beam and compared to experiment.

ISSN:0003-6951    

DOI:10.1063/1.1654945

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Exploded‐wire discharges of tungsten and titanium driven by a high‐power pulse generator have been used to produce intense x‐ray continuum and line radiation. A calibrated LiF crystal spectrograph recorded the radiation spectrum in the 3‐ to 25‐keV range. More than 20 J of x radiation are emitted in this photon energy band by tungsten plasmas in less than 50 nsec. The source of emission is less than 1 mm in diameter and about 3.5 cm long.

ISSN:0003-6951    

DOI:10.1063/1.1654946

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

It is shown that the holding current in threshold switching devices is a consequence of the time rate of recovery of threshold voltage taken together with the device capacitance. The application of these considerations to recent double‐pulse experiments is also discussed.

ISSN:0003-6951    

DOI:10.1063/1.1654947

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

HF lasing has been obtained from theP6(5) andP6(4) transitions as well as severalP5andP4transitions of HF. Lasing from these high vibrational levels was produced by transverse pulsed discharges in mixtures of HI, He, and SF6or SO2F2. The low bond energy of HI contributed to doubling the energy of laser pulses compared to the energy observed when H2was substituted for HI. The HF laser frequencies were also measured for other fuels with low RH bond energies.

ISSN:0003-6951    

DOI:10.1063/1.1654948

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

The use of VO2films for direct‐bit optical storage with near‐infrared lasers is demonstrated. The VO2response is fast (< 10 ns), and large read signals are obtained with unpolarized light. A writing threshold of 0.03 nJ/&mgr;m2is observed.

ISSN:0003-6951    

DOI:10.1063/1.1654949

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Measurements of the electro‐optic properties of high‐resistivity GaAs epitaxial thin films have been made at the 10.6‐&mgr;m CO2laser wavelength by a novel rf interferometric technique. The described technique affords very accurate and convenient measurements of the phase shift of a 10.6‐&mgr;m guided wave mode in thin films as a function of reverse‐biased junction voltage. The measured electro‐optic coefficient for thin films is found to be in good agreement with conventional measurements,r41= 1.2 × 10−10cm/V at 10 &mgr;m, for bulk GaAs electro‐optic crystals.

ISSN:0003-6951    

DOI:10.1063/1.1654950

出版商:AIP    

年代:1973

数据来源: AIP