摘要:

Dislocation‐free silicon web crystals have been grown reproducibly in the thickness range of 15 to 45 &mgr; and approximately 4 to 8 mm wide. Phosphorus, arsenic, and boron were used as dopants to achieve controlled resistivities from 0.05 to 20 &OHgr;‐cm.

ISSN:0003-6951    

DOI:10.1063/1.1754720

出版商:AIP    

年代:1966

数据来源: AIP

摘要:

The light‐emitting diodes described in this Letter differ from standard type diodes insofar as the amphoteric dopant Si is the dominant impurity on both sides of the junction. Thep‐njunction is completely solution regrown. The highly compensatedpregion gives rise to a wide active region up to 50 &mgr; in width. The interesting feature of these diodes is their high external quantum efficiencies at 300°K. Values up to 6% have been measured on diodes, when an antireflecting coat has been applied.

ISSN:0003-6951    

DOI:10.1063/1.1754721

出版商:AIP    

年代:1966

数据来源: AIP

摘要:

Infrared photoconductivity is obtained in a thin‐film structure, Al&sngbnd;Al2O3&sngbnd;Te&sngbnd;Au, and the evidence suggests that it is due to photon‐modulated tunneling.

ISSN:0003-6951    

DOI:10.1063/1.1754722

出版商:AIP    

年代:1966

数据来源: AIP

摘要:

A crude calculation of the energy of a Bloch wall subdivided into two segments of opposite polarity is given. It is shown that the energy of this structure is lower than that of the ordinary Bloch wall only if the anisotropy constantKis sufficiently small. Thus one expects to observe subdivided Bloch walls only in low‐anisotropy ferromagnetic materials.

ISSN:0003-6951    

DOI:10.1063/1.1754723

出版商:AIP    

年代:1966

数据来源: AIP

摘要:

A concept for the detection of ionizing radiation which utilizes the inherent high speed and large amplitude of the induced charge pulse in a semiconductor avalanche detector coupled with the tunnel diode element is described. It has been shown possible to digitally detect extremely low energy events even in high‐current‐induced noise backgrounds in the avalanche detector. Cryogenic cooling is not required. Detection is accomplished by use of the rate of rise and magnitude of the nuclear pulse (or alternatively a pulse of suitable amplitude and rate of rise generated by optical photons). The high‐speed time domain allows discrimination against all noise‐generated events because charge is not integrated in this scheme.

ISSN:0003-6951    

DOI:10.1063/1.1754724

出版商:AIP    

年代:1966

数据来源: AIP

摘要:

Laser oscillation near 5.2 &mgr; has been observed during the flash photolysis of cyanogen (C2N2). A total peak power of more than 10 mW was obtained on three lines, identified as vibrational‐rotational transitions in the ground electronic state of CN. The optimum pressure was found to be about 20 torr of cyanogen. Optical pumping is the only mechanism now known to produce laser action on these transitions.

ISSN:0003-6951    

DOI:10.1063/1.1754725

出版商:AIP    

年代:1966

数据来源: AIP

摘要:

Coherent microwave power atK‐band frequencies has been generated by bars ofp‐type indium antimonide with recrystallized surfaces and bars of indium antimonide with layeredpandnregions. At an ambient temperature of 77°K, electric and magnetic fields are applied to the rod at an angle &thgr;, to each other. A theory which considers the two‐stream interaction in a transverse magnetic field is presented. The output frequency predicted by the theory is in the range of experimental observation.

ISSN:0003-6951    

DOI:10.1063/1.1754726

出版商:AIP    

年代:1966

数据来源: AIP

摘要:

Observations of low‐energy electron diffraction patterns reveal that the epitaxial temperature for Si films is approximately 400°C on clean Si {111} surfaces and tends to be lower, although less well defined, on clean Si{100} surfaces. A few monolayers deposited at room temperature on{111} are amorphous, on{100} they exhibit the bulk structure. The recrystallization process of an amorphous surface layer occurs by way of an ``intermediate'' phase, characterized by periodic modulations of lattice spacing and scattering factor, and an ``ideal'' phase that corresponds to simple termination of the bulk lattice. The transition from the latter to the reconstructed surface structure occurs by way of antiphase domains.

ISSN:0003-6951    

DOI:10.1063/1.1754727

出版商:AIP    

年代:1966

数据来源: AIP

摘要:

Electrical breakdown in cuprous chloride single crystals was observed to be caused by copper precipitated as either filaments with dendritic branches or as networks. A method was found to out‐diffuse the copper and thereby increase the resistivity of the material.

ISSN:0003-6951    

DOI:10.1063/1.1754728

出版商:AIP    

年代:1966

数据来源: AIP

摘要:

The small fluctuation theory of self‐diffusion in liquid metals proposed by Swalin has been modified to allow a thermally activated diffusion process and local density fluctuations. The resulting diffusion equation predicts a linear variation of diffusivity with temperature. This is confirmed by existing data in liquid In, Sn, Cu, Na, Zn, Ga, K, Hg and Ag.

ISSN:0003-6951    

DOI:10.1063/1.1754729

出版商:AIP    

年代:1966

数据来源: AIP