1. |
Hard conducting implanted diamond layers |
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Applied Physics Letters,
Volume 30,
Issue 3,
1977,
Page 129-130
J. J. Hauser,
J. R. Patel,
J. W. Rodgers,
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摘要:
Hard conducting diamond layers were produced by carbon implantation. Above a threshold implantation dose (≃3×1016/cm2), these layers possess the high conductivity of graphite (≃10−2 &OHgr;−1 cm−1) and a hardness intermediate between that of silicon and diamond.
ISSN:0003-6951
DOI:10.1063/1.89323
出版商:AIP
年代:1977
数据来源: AIP
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2. |
Enhancement of H+fraction in hydrogen ion sources by means of predissociation method |
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Applied Physics Letters,
Volume 30,
Issue 3,
1977,
Page 130-132
Jinchoon Kim,
R. C. Davis,
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摘要:
The H+fraction of a hydrogen beam from a duoPIGatron ion source has been enhanced by a predissociation method, in which the hydrogen gas is predissociated in a hot tungsten oven prior to the arc discharge, while the recombination rate is minimized by hot walls inside the arc chamber. Preliminary results indicate the method can result in a substantial increase in the H+fraction.
ISSN:0003-6951
DOI:10.1063/1.89324
出版商:AIP
年代:1977
数据来源: AIP
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3. |
Atomic indium photodissociation laser at 451 nm |
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Applied Physics Letters,
Volume 30,
Issue 3,
1977,
Page 132-134
R. Burnham,
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摘要:
Stimulated emission has been obtained on the 451‐nm line in neutral atomic indium through photodissociation of indium monoiodide vapor using argon fluoride laser radiation at 193 nm. Laser pulses with energies of 0.5 mJ resulted from the absorption of 30 mJ of ArF laser radiation.
ISSN:0003-6951
DOI:10.1063/1.89325
出版商:AIP
年代:1977
数据来源: AIP
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4. |
Angular distribution of laser light scattered from laser‐produced plasma at high irradiance |
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Applied Physics Letters,
Volume 30,
Issue 3,
1977,
Page 134-136
B. H. Ripin,
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摘要:
Angular distributions of scattered laser light from Nd‐laser‐produced plasma at irradiances of 1015–1016W/cm2were measured. Total reflectivities in the range 20–50% are found. The total reflectivity remains approximately constant as the target is rotated from normal incidence up to 50°–60°, implying the existence of a steep density gradient near the critical density and/or absorption of laser light in the underdense region of the plasma.
ISSN:0003-6951
DOI:10.1063/1.89326
出版商:AIP
年代:1977
数据来源: AIP
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5. |
Angular distributions of x‐ray line radiation from a laser‐produced plasma |
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Applied Physics Letters,
Volume 30,
Issue 3,
1977,
Page 137-139
L. F. Chase,
W. C. Jordan,
J. D. Perez,
J. G. Pronko,
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摘要:
A method for measuring angular distributions of individual x‐ray line intensities from laser‐produced plasmas is described and applied to measure the strong angular dependence of lines from an aluminum plasma. The data are consistent with calculations made with a simple plasma model incorporating radiation reabsorption and transport in the plasma.
ISSN:0003-6951
DOI:10.1063/1.89327
出版商:AIP
年代:1977
数据来源: AIP
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6. |
A comment on the methods of calculation of corona onset voltage |
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Applied Physics Letters,
Volume 30,
Issue 3,
1977,
Page 139-141
M. M. A. Salama,
H. Parekh,
K. D. Srivastava,
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摘要:
Two methods of calculating corona onset voltage (cov) in nonuniform air gaps are studied. The variation of number of electrons (or positive ions) in primary and secondary electron avalanches for short (⩽20 cm) as well as long (2–10 m) positive point‐to‐plane air gaps is obtained. Several conclusions regarding critical charge carrier numbers are drawn from this study.
ISSN:0003-6951
DOI:10.1063/1.89328
出版商:AIP
年代:1977
数据来源: AIP
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7. |
Investigation of ion‐implantation damage with x‐ray double reflection |
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Applied Physics Letters,
Volume 30,
Issue 3,
1977,
Page 141-143
D. P. Lecrosnier,
G. P. Pelous,
J. Burgeat,
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摘要:
The lattice parameters of boron‐implanted silicon layers have been measured by an x‐ray diffraction technique. The rocking curves show an expansion volume which anneals in several stages: 100, 280, and 400–600 °C. Around 600 °C, an almost stress‐free crystal is found. This result suggests the formation of defect complexes having a compensating effect on the crystal lattice.
ISSN:0003-6951
DOI:10.1063/1.89329
出版商:AIP
年代:1977
数据来源: AIP
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8. |
A capacitively shunted superconducting microbridge |
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Applied Physics Letters,
Volume 30,
Issue 3,
1977,
Page 144-146
R. Y. Chiao,
M. T. Levinsen,
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摘要:
A superconducting microbridge small enough to exhibit the Josephson effect has been shunted by a large external capacitance. Surprisingly little capacitive hysteresis is observed in itsI‐Vcharacteristic. Prominent subgap structures are seen. The resistively shunted junction (RSJ) model fails to explain the observations.
ISSN:0003-6951
DOI:10.1063/1.89330
出版商:AIP
年代:1977
数据来源: AIP
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9. |
Picosecond XeF amplified laser pulses |
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Applied Physics Letters,
Volume 30,
Issue 3,
1977,
Page 146-148
I. V. Tomov,
R. Fedosejevs,
M. C. Richardson,
W. J. Sarjeant,
A. J. Alcock,
K. E. Leopold,
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摘要:
Picosecond third harmonic (353 nm) Nd : glass laser pulses have been amplified by factors of ≳6 000 in a high‐pressure XeF discharge. Peak powers ∼50 kW have been observed.
ISSN:0003-6951
DOI:10.1063/1.89311
出版商:AIP
年代:1977
数据来源: AIP
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10. |
A simple mode‐locking technique for large‐aperture TEA CO2lasers |
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Applied Physics Letters,
Volume 30,
Issue 3,
1977,
Page 148-150
A. J. Alcock,
P. B. Corkum,
D. J. James,
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摘要:
A large‐aperture unstable‐resonator TEA CO2oscillator has been mode locked by injection of nanosecond pulses chopped from the 1‐W output of a cw CO2oscillator. Power gains of ∼1012and a locking window of ∼200 ns have been observed.
ISSN:0003-6951
DOI:10.1063/1.89312
出版商:AIP
年代:1977
数据来源: AIP
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