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1. |
Transverse tranśmission theory for multilayer planar microwave circuits |
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International Journal of Numerical Modelling: Electronic Networks, Devices and Fields,
Volume 7,
Issue 4,
1994,
Page 225-238
Ke Wu,
Cheuk‐Yu Edward Tong,
Pierre Saguet,
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摘要:
AbstractTransverse transmission concepts in the Fourier transmission domain for multilayer planar transmission medium are presented. This complete transverse transmission theory (TTT) is found to be a superset of different Fourier‐transform‐based numerical techniques widely used in guided wave analysis, namely the modematching method and the spectral‐domain approach. The features of the theory are: the expansion of field quantities in longitudinal section (LSE/LSM) modes, the concept of rotation of the transverse field vectors, and a comprehnsive algorithm using recursive matrix standard form. It is shown that the mode‐matching method and spectral‐domain approach are generally equivalent except for the last step of imposing the final boundary conditions, and can therefore be summarized in a unified theory within the framework of TTT. In addition, a new parameter, the polarization coefficient, has been introduced to describe the field polarization of the guided wave in a quantitative manner. It is believed that the present theory will help us to gain more insight into hybrid mode propagation in multilayer planar
ISSN:0894-3370
DOI:10.1002/jnm.1660070402
出版商:John Wiley&Sons, Ltd
年代:1994
数据来源: WILEY
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2. |
Numerical simulation of two‐valley semiconductor device model based on an ENO shock capturing algorithm |
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International Journal of Numerical Modelling: Electronic Networks, Devices and Fields,
Volume 7,
Issue 4,
1994,
Page 239-252
Desanka Radunvić,
Jovan Radunović,
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摘要:
AbstractSimulation results for a n+−n−n+two‐valley semiconductor device obtained by use of a shock capturing numerical agorithm are presented. The one‐dimensional problem is modelled by two systems of Euler equations connected by their source terms, and the Poisson equation. The resulting system of seven equations is hyperbolic and non‐linear, and it is a great problem to find an adequate numerical approximation of its time‐dependent discontinuities. There are additional complications due to the stiffness of the source terms.The numerical method used in this paper is first‐order acurate in time but of high spatial order in regions of smoothness. Before the method is applied, the system has to be transformed to a characteristic form. The adopted shock capturing algorithm enables the choice of the order of the accuracy by the appropriate choice of the reconstruction polynomial. Reconstructions of the second and fourth order are tested and some numerical results are presented. Because of the stiffness of the source terms, the sixth‐order accurate scheme breaks down. The results presented, and especially the response obtained of the structure to the step and periodic applied voltage, prove the correctness of t
ISSN:0894-3370
DOI:10.1002/jnm.1660070403
出版商:John Wiley&Sons, Ltd
年代:1994
数据来源: WILEY
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3. |
Harmonic balance method applied to the numerical electrical physical modelling of two‐terminal, non‐linear microwave circuits in the frequency domain |
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International Journal of Numerical Modelling: Electronic Networks, Devices and Fields,
Volume 7,
Issue 4,
1994,
Page 253-265
C. Dalle,
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摘要:
AbstractA numerical frequence‐domain modelling of two‐terminal, non‐linear microwave circuits is presented. It basically relies on a process allowing the solution of the frequency‐domain curcuit harmonic balance equations while accounting for the semiconductor device by means of an accurate numerical macroscopic physical model. In its present state of development, the model allows the study of a single two‐terminal device circuit operating in harmonic mode. Its capabilites are illustrated by means of the results of a study devoted to the optimization of the load curcuit configuration of a millimetre‐wave avalanche diode frequency multiplier. The influence of the output load impedance level on the circuit output RF performance has been investigated for different input power levels in direct frequency multiplication mode and in the presence of additional circuit tunings at low harmonic rank idler
ISSN:0894-3370
DOI:10.1002/jnm.1660070404
出版商:John Wiley&Sons, Ltd
年代:1994
数据来源: WILEY
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4. |
Numerical drift‐diffusion simulation of Auger hot electron transport in Ingaasp/Inp double heterojunction laser diodes |
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International Journal of Numerical Modelling: Electronic Networks, Devices and Fields,
Volume 7,
Issue 4,
1994,
Page 267-281
Kam‐Wing Chai,
Zhan‐Ming Li,
Sean P. McAlister,
John G. Simmons,
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摘要:
AbstractThis paper considers the adaptation of drift‐diffusion device simulation methodology to study Auger‐recombination‐induced hot electron transport characteristics in InGaAsP/InP double heterostructure laser diodes. In order to model the transport behaviour of the Auger hot electrons, we decompose the conventional electron current continuity equation into two components, with one for the Auger hot electrons and the other for the low‐energy electrons. These equations, which use the energy relaxation time parameter to model the dynamics of the Auger hot electrons, are then coupled with the hole current continuity equation and the Poisson equation to obtain self‐consistent solutions. Results from the case studies of one‐dimensional N‐p‐P InGaAsP/InP double heterojunction laser diodes with material composition corresponding to 1·3 μm and 1·55 μm wavelength emissions are presented. We have observed that hot electrons generated through Auger recombination inside the active region can spread into both the N‐ and the P‐InP cladding layers. Within the drift‐diffusion framework, it is demonstrated that the hot electron concentration in the N‐InP cladding layer can be five orders of magnitude higher than that in the P‐InP cladding layer. Because energy transport of the hot electrons in not modelled under the drift‐diffusion approximation, the simulated results are discussed to highlight some of the possible limitations in using drift‐diffusion physics to study Auger hot electron transport behaviour. The importance of taking energy tra
ISSN:0894-3370
DOI:10.1002/jnm.1660070405
出版商:John Wiley&Sons, Ltd
年代:1994
数据来源: WILEY
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5. |
On the responses of strip‐line interconnects with discontinuities excited by external fields |
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International Journal of Numerical Modelling: Electronic Networks, Devices and Fields,
Volume 7,
Issue 4,
1994,
Page 283-304
S. Sali,
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摘要:
AbstractAn algorithm is developed to evaluate the responses of discontinuous coplanar strip‐lines excited by external electromagnetic fields. The algorithm uses the cascade chain matrix method which employs the distributed circuit parameters to model the external field coupling to the line and it is applicable to most commonly encountered discontinuities in microwave integrated circuit interconnects on lossy substrates. A general CAD program is developed based on this model and it is applied to realistic coplanar strip‐line interconnections with geometric and resistive discontinuities to illustrate the capabilities of the algorithm. These interconnect models are selected from a practical microwave integrated circuit design. Simplicity and fast speed of the algorithm enable computer‐aided analysis of externally induced electromagnetic noise in integrated circuits to be carried out. The effects of dielectric losses in the integrated circuit substrates and the discontinuities in the conducting tracks on the wave coupling are investigated in isol
ISSN:0894-3370
DOI:10.1002/jnm.1660070406
出版商:John Wiley&Sons, Ltd
年代:1994
数据来源: WILEY
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6. |
Announcement |
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International Journal of Numerical Modelling: Electronic Networks, Devices and Fields,
Volume 7,
Issue 4,
1994,
Page 307-307
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ISSN:0894-3370
DOI:10.1002/jnm.1660070407
出版商:John Wiley&Sons, Ltd
年代:1994
数据来源: WILEY
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7. |
Masthead |
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International Journal of Numerical Modelling: Electronic Networks, Devices and Fields,
Volume 7,
Issue 4,
1994,
Page -
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PDF (109KB)
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ISSN:0894-3370
DOI:10.1002/jnm.1660070401
出版商:John Wiley&Sons, Ltd
年代:1994
数据来源: WILEY
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