摘要:

GaSb TPV devices are commonly manufactured by Zn diffusion from the vapour phase on a n‐type substrate, leading to very high doping concentrations in a narrow emitter. This fact emphasizes the need of a careful modelling that must include high doping effects to simulate the optoelectronic behaviour of devices. In this work the key parameters that have strong influence on the performance of GaSb TPV devices are underlined, more reliable values are suggested and our first results on the study of the absorption coefficient dependence with p‐type high doping concentration are presented. © 2003 American Institute of Physics

ISSN:0094-243X    

DOI:10.1063/1.1539399

出版商:AIP    

年代:1903

数据来源: AIP

摘要:

A complete model for GaSb TPV converters considering multiple real conditions (spectra, temperature, ARC, size, number and characteristics of grid fingers, size of busbar, etc.) is presented. The model has been applied to GaSb TPV converters fabricated in our laboratory by single zinc diffusion. The agreement between theory and experiments is very good. Future guides of performance improvement like the passivation of the surface together with the correspondent structure optimisation and the achievement of a better GaSb quality available more widespread are suggested. © 2003 American Institute of Physics

ISSN:0094-243X    

DOI:10.1063/1.1539400

出版商:AIP    

年代:1903

数据来源: AIP

摘要:

This paper describes the practical implementation of TPV systems. As a key part of these systems, we developed a new flexible photocell module for TPV applications. The module consists of commercially available monocrystalline silicon solar cells, which were cut into small stripes that are series connected to achieve a high voltage and a reduced current for operation at an illumination density of 5 – 10 suns. For an easy mounting into a heating boiler, the module is highly flexible and can be bent into a cylindrical shape. The rear side of the module is electrically isolated, but achieves a good heat coupling through a covering aluminium foil to the boiler wall. Thus, it can directly be mounted into a water‐cooled boiler housing without the need of an additional water‐cooling circuit. A first test module with an active cell area of 481 cm2achieved an electricity output of 50 W by irradiation with an Yb2O3mantle emitter heated with a 20 kW methane burner. © 2003 American Institute of Physics

ISSN:0094-243X    

DOI:10.1063/1.1539401

出版商:AIP    

年代:1903

数据来源: AIP

摘要:

This paper discusses recent efforts to realize GaInAsSb/GaSb TPV cells with an internal back‐surface reflector (BSR). The cells are fabricated by wafer‐bonding GaInAsSb/GaSb device layers to GaAs substrates with a dielectric/Au reflector, removing the GaSb substrate, and subsequently processing the layers using standard photolithographic techniques. The internal BSR enhances optical absorption within the device, while the dielectric layer provides electrical isolation. This approach is compatible with monolithic integration of series‐connected TPV cells and can mitigate the requirements of filters used for front‐surface spectral control. © 2003 American Institute of Physics

ISSN:0094-243X    

DOI:10.1063/1.1539402

出版商:AIP    

年代:1903

数据来源: AIP

摘要:

Broadband antirefraction property is demonstrated by using subwavelength grating structures on GaSb wafers, which are the base material of GaSb PV cells. Surface nano‐structure with 350nm periods is fabricated by means of electron beam lithography and fast atom beam (FAB) etching. Since FAB is electrically neutral atomic or molecular beam, it is possible to obtain fine patterns with nanometer order. The reflectivity of this sample is strongly suppressed from the visible to near IR region. The experimental data is compared with numerical simulations by using the rigorous coupled wave analysis. The thermal stability of SWG structures are also studied by measuring reflection spectra of heated samples. © 2003 American Institute of Physics

ISSN:0094-243X    

DOI:10.1063/1.1539403

出版商:AIP    

年代:1903

数据来源: AIP

摘要:

0.6 eV InGaAs/InPAs double heterostructure n/p/n tunnel junction monolithic interconnected modules (TJ‐MIMs) having p‐type bases doped uniformly at 2×1017cm−3and inhomogeneously graded from 4×1016cm−3to 4×1017cm−3(10:1 doping ratio) were grown, processed, and characterized. The electrical performance of the devices with inhomogeneously graded bases was higher than that of the uniformly doped case due to the built‐in electric field in the base region, making QEintand JSClarger. The free carrier absorption increased due to the relatively higher doping levels for the linearly doped case but remained unchanged for the exponential profile. Therefore, results showed that exponentially grading the base p‐type doping increased the MIM performance by ∼ 8&percent; (relative). © 2003 American Institute of Physics

ISSN:0094-243X    

DOI:10.1063/1.1539404

出版商:AIP    

年代:1903

数据来源: AIP

摘要:

This paper assesses the performance of antimonide‐based thermophotovoltaic cells fabricated by different technologies. In particular, the paper compares the performance of lattice matched quaternary (GaInAsSb) cells epitaxially grown on GaSb substrates to the performance of ternary (GaInSb) and binary (GaSb) cells fabricated by Zn diffusion on bulk substrates. The focus of the paper is to delineate the key performance advantages of the highest performance‐to‐date of the quaternary cells to the performance of the alternative ternary and binary antimonide‐based diffusion technology. The performance characteristics of the cells considered are obtained from PC‐1D simulations using appropriate material parameters. © 2003 American Institute of Physics

ISSN:0094-243X    

DOI:10.1063/1.1539405

出版商:AIP    

年代:1903

数据来源: AIP