摘要:

The importance of electron and hole trapping in SiO2have been well documented as important considerations in the design of MOS‐Field Effect Transistors. These considerations become increasingly important as the channel width is decreased. In addition, the techniques used to make contemporary‐small devices require the use of radiation which generates new trapping sites in the SiO2. The traps are classified in terms of those located in the bulk of the SiO2and those located at the Si‐SiO2interface. The process dependence of the bulk traps is entirely different than the process dependence of the interface traps. It has been observed that prolonged heat treatments in N2at 1000° C decrease the bulk trap density but increase the interface trap density and that this increase in interface trap density can be reduced by the use of a O2anneal which is also done at 1000° C. A recent observation by Aslam, Balk and Young shows a relationship between the deep interface trap with a cross section of 5 × 10−19cm2and the shallow trap observed only at low temperatures with a cross section of 1 × 10−16cm2. This suggests a bimodal model to describe these traps as arising from a single site.

ISSN:0094-243X    

DOI:10.1063/1.34815

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Several techniques have been used to inject electrons into SiO2with various energies. Interface states are found to be generated whenever electrons flow through the oxide. However, the efficiency of interface state generation depends upon the method of electron injection. At high enough fields, positive charge is produced in the oxide which enhances the production of interface states. All of the states are amphoteric and are probably dangling Si bonds at the interface (Pb‐centers).

ISSN:0094-243X    

DOI:10.1063/1.34835

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

In this work we report a detailed SIMS analysis of the diffusion of ion implanted B in SiO2. Using the joined half Gaussian approximation to the initial B profile the diffusion of B has been modeled for temperatures of 1050° to 1200°C. A fast diffusing tail has been observed for diffusion temperatures below 1050°C. A method is suggested to minimize this ‘‘tail’’ diffusions.

ISSN:0094-243X    

DOI:10.1063/1.34817

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Implantation of hydrogen into Si‐SiO2structures is seen to increase the number of E′ centers in the SiO2induced by ionizing irradiation. Correlation of the concentration of these centers with the ESR signal due to conduction electrons in the accumulation layer indicates that these centers are related to the positive interface charge density.

ISSN:0094-243X    

DOI:10.1063/1.34827

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

In this work we report the effects of postmetallization forming gas (F.G.) annealing, electron photoinjection and electron beam irradation on the effective work function difference (&Fgr;ms) and effective interface barrier heights at the metal‐insulator and semiconductor‐insulator interfaces (&Fgr;mand &Fgr;s, respectively) in Al‐SiO2‐Si (MOS) structures.It is shown that the variations of &Fgr;msare generally due to the simultaneous modifications of the barrier heights at both interfaces.Special attention is paid to the phenomena taking place at the Si‐SiO2interface.

ISSN:0094-243X    

DOI:10.1063/1.34828

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Based on the observation of crystal orientation dependence of Si 2p photoelectron spectra, the orientation dependence of interface structures and the distribution of intermediate oxidation states of Si in the oxide film were determined. The effects of oxidation condition on the structures of interfacial transition layer and SiO2were found.

ISSN:0094-243X    

DOI:10.1063/1.34829

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

In a paper to be published elsewhere /1/ we discuss the interface channel rf conductivity of MOS capacitor samples prepared on (100) p‐Si wafers. We consider frequencies in the range 1‐100 MHz. Such dynamic measurements are relevant for devices operated in a transient mode, with voltages switched and conductivities registered in a fraction of a &mgr;sec.It has been demonstrated in ref. /2/ that at rf frequencies the surface conductivity can be measured in a contactless, capacitively‐coupled fashion. For interfaces with locally inhomogeneous conductivity the rf measurement can be dominated by the capacitive shorting‐out effect as in Fig. 1. There will be a distinct frequency‐dependence of the impedance.

ISSN:0094-243X    

DOI:10.1063/1.34830

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

The atomic structure of Si‐SiO2interfaces resulting from oxidation of singular {111} and vicinal (111)3°[11{0] and (111)2°[11{2] has been studied by high resolution electron microscopy. The transition from crystalline Si to amorphous SiO2was found to be very abrupt. The structure of the interface can be described by a terrace‐ledge‐kink‐model. This structure is consistent with a ledge mechanism of silicon oxidation.

ISSN:0094-243X    

DOI:10.1063/1.34831

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

A review of lasers and their applications in processing microelectronic materials on both the wafer and packaging level is presented. Schemes for wiring and implemeting redundancy on VLSI wafers using highly focused laser pulses are discussed. A variety of maskless deposition and etching techniques together with their physical mechanisms are reviewed, including those relating to the deposition of gold, copper and silicon as well as the localized removal of metals, semiconductors and polymers.

ISSN:0094-243X    

DOI:10.1063/1.34832

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

As‐deposited palladium and nickel contacts to dry etched (reactive ion etched or ion beam etched) silicon surfaces display anomalous current‐voltage (I‐V) behavior due to the damage layer induced by the dry etching processing. This study examines the possibility that normal current‐voltage behavior may be recovered by consuming the damage during low temperature silicide formation. Evolution of Pd/Si and Ni/Si contacts for different annealing times was monitored by means of current‐voltage, capacitance‐voltage, and low temperature (<°C) activation energy. It is found that damage still remains for both Pd/Si and Ni/Si systems after low temperature silicide formation; however, this damage is more noticeable on n‐type than it is on p‐type silicon.

ISSN:0094-243X    

DOI:10.1063/1.34833

出版商:AIP    

年代:1984

数据来源: AIP