摘要:

Siemens Solar has now introduced its next generation of solar modules, the ST5 and ST10 modules based on thin filmCuInSe2-alloys. Experience with volume production of CIS modules is described including production statistics for1×4-foot circuits with an average output of almost 40 watts, or nearly 11&percent; aperture efficiency. Module stability and package development is reviewed together with a survey of future manufacturing challenges. ©1999 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.57912

出版商:AIP    

年代:1999

数据来源: AIP

摘要:

The nature of the interface betweenCuInSe2(CIS) and the chemical bath deposited CdS layer has been investigated. We show that heat-treating the absorbers in Cd- or Zn-containing solutions in the presence of ammonium hydroxide sets up a chemical reaction which facilitates an extraction of Cu from the lattice and an in-diffusion of Cd. The characteristics of devices made in this manner suggest that the reaction generates a thin, n-doped region in the absorber. It is quite possible that theCdS/CuInSe2device is a buried, shallow junction with a CdS window layer, rather than a heterojunction. We have used these ideas to develop methods for fabricating devices without CdS or Cd. A 14.2&percent; efficiency ZnO/CIGS device was obtained through aqueous treatment in Zn solutions. ©1999 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.57948

出版商:AIP    

年代:1999

数据来源: AIP

摘要:

Challenges posed by the fabrication of monolithic interconnects on photovoltaic (PV) modules made on a flexible, insulating substrate of polyimide are detailed. Scribing requirements and constraints using flexible substrates are compared to those existing for rigid, transparent substrates such as glass. Several approaches which can be pursued to produce low-loss module interconnects on flexible substrates are described. ©1999 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.57949

出版商:AIP    

年代:1999

数据来源: AIP

摘要:

Preliminary results are presented on the growth and characterization of Cu-In-Se-S thin films formed by reaction of Cu-In layers with aH2Se/H2Sgas mixture. The approach was to first develop a process to grow device qualityCuInS2films by reaction of a Cu-In layer inH2S.This process was then modified to form alloyedCuIn(Se,&hthinsp;S)2films. A quantitative model for the reaction of Cu-In films in a CVD reactor with a mixedH2S-H2Seflowing gas was developed and verified. The composition of theCuIn(Se,&hthinsp;S)2film can be controlled by the concentrationH2Se+H2Sand/orSe2+S2in the gas phase. Graded films can be made by annealing eitherCuInSe2orCuInS2films in a controlled Se and/or S containing atmosphere. Expanding this to include Ga in the films will provide a basis for engineering film compositions and bandgaps. ©1999 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.57950

出版商:AIP    

年代:1999

数据来源: AIP

摘要:

This paper summarizes our development of high-throughput manufacturing and the long-term testing of CdS/CdTe photovoltaic (PV) modules. We report the development of a vapor transport deposition (VTD) process for II-VI thin-films capable of satisfying the requirements of very large-scale production. CdTe film deposition rates of ⩾1 &mgr;m/s have been translated into production line speeds up to 2.5 m/min and areal generation rates up to 1.5 m2/min. The best small-area devices fabricated using VTD material are more than 11&percent; efficient. Long-term outdoor module testing continues to indicate a stable product while accelerated life testing has revealed the superiority of alternative processing methodologies. ©1999 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.57907

出版商:AIP    

年代:1999

数据来源: AIP

摘要:

This paper describes an improved CdS/CdTe polycrystalline thin-film solar-cell device structure that integrates a zinc stannate (Zn2SnO4or ZTO) buffer layer between the transparent conductive oxide (TCO) layer and the CdS window layer. Zinc stannate films have a high bandgap, high transmittance, low absorptance, and low surface roughness. In addition, these films are chemically stable and exhibit higher resistivities that are roughly matched to that of the CdS window layer in the device structure. Preliminary device results have demonstrated that by integrating a ZTO buffer layer in bothSnO2-based andCd2SnO4(CTO)-based CdS/CdTe devices, performance and reproducibility can be significantly enhanced. ©1999 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.57910

出版商:AIP    

年代:1999

数据来源: AIP

摘要:

We have investigated the use of several different types of lasers for scribing of the thin film materials: CdTe,CuInGaSe2,ZnO,SnO2,Mo, Al, and Au. The lasers included several types of Nd: YAG (1064 and 532 nm wavelengths), Cu vapor (511/578 nm), XeCl excimer (308 nm), and KrF excimer (248 nm). Pulse durations ranged from ∼0.1 nsec to ∼250 ns. We found that the Nd: YAG systems work well for almost all of the above materials except for the transparent conductor ZnO, for which the two excimer lasers showed good performance. Pulse duration was found generally not to be critical except for the case of CIGS on Mo where longer pulse durations appear advantageous. ©1999 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.57951

出版商:AIP    

年代:1999

数据来源: AIP

摘要:

This paper describes modeling polycrystalline thin-film solar cells using the programAMPS-1D1to visualize the relationships between the many variables involved. These simulations are steps toward two dimensional modeling the effects of grain boundaries in polycrystalline cells. Although this paper describes results for the CdS/CdTe cell, the ideas presented here are applicable to copper-indium-gallium selenide (CIGS) cells as well as other types of cells. Results of these one-dimensional simulations are presented: (a) the duplication of experimentally observed cell parameters, (b) the effects of back-contact potential barrier height and its relation to stressing the cell, (c) the effects of the depletion layer width in the CdTe layer on cell parameters, and (d) the effects of CdS layer thickness on the cell parameters. Experience using the software is also described. ©1999 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.57952

出版商:AIP    

年代:1999

数据来源: AIP

摘要:

In this paper, we review the progress made by the CdTe Thin Film Partnership Reliability Team in developing an accelerated environmental test (AET) methodology that will indicate the expected life of CdTe cells incorporated in a module operated in the field. The primary focus is on test design, cell reliability, and the correlation of indoor accelerated testing with outdoor exposure. The team has emphasized cell-stability issues, and is not examining failure modes such as those involving module packaging, junction boxes, and mounting. The goal is to develop a CdTe cell technology with a 30 yr life, and verify that reliability through AETs. ©1999 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.57922

出版商:AIP    

年代:1999

数据来源: AIP

摘要:

Using defect thermodynamics, we discuss physical factors that affect doping limits in semiconductors. The dependencies of the defect formation enthalpy on the atomic chemical potentials and on the electron Fermi energy are demonstrated. These dependencies, in particular on the Fermi energy, lead to spontaneous formation of charge-compensating defects that can limit doping. Experimental data compiled for III-V, II-VI, andI-III-VI2compounds support this view and further provide insight into the connections among different host materials. We argue that what matters is not the magnitude of the band gap that determines the dopability of a material, but rather, the relative position of the conduction-band minimum (in the case of n-doping) and the valence-band maximum (in the case of p-doping) with respect to vacuum. ©1999 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.57929

出版商:AIP    

年代:1999

数据来源: AIP