| 1. |
Chemical beam epitaxy for opto‐electronics and electronics applications |
| |
AIP Conference Proceedings,
Volume 227,
Issue 1,
1991,
Page 2-4
W. T. Tsang,
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ISSN:0094-243X
DOI:10.1063/1.40617
出版商:AIP
年代:1991
数据来源: AIP
|
| 2. |
Doping distributions in III‐V semiconductors |
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AIP Conference Proceedings,
Volume 227,
Issue 1,
1991,
Page 5-8
E. F. Schubert,
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PDF (156KB)
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ISSN:0094-243X
DOI:10.1063/1.40624
出版商:AIP
年代:1991
数据来源: AIP
|
| 3. |
Incorporation of arsenic in InP layers and heterointerfaces in GaInAs/InP heterostructures grown by low‐pressure metalorganic vapor phase epitaxy |
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AIP Conference Proceedings,
Volume 227,
Issue 1,
1991,
Page 9-12
Morio Wada,
Katsutoshi Sakakibara,
Yoichi Sekiguchi,
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ISSN:0094-243X
DOI:10.1063/1.40634
出版商:AIP
年代:1991
数据来源: AIP
|
| 4. |
In situoptical characterization and control of epitaxial III‐V crystal growth |
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AIP Conference Proceedings,
Volume 227,
Issue 1,
1991,
Page 13-16
W. E. Quinn,
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PDF (216KB)
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ISSN:0094-243X
DOI:10.1063/1.40638
出版商:AIP
年代:1991
数据来源: AIP
|
| 5. |
Selective epitaxial growth of AlGaAs by MOCVD using dialkylmetalchloride |
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AIP Conference Proceedings,
Volume 227,
Issue 1,
1991,
Page 17-20
Ko‐ichi Yamaguchi,
Kotaro Okamoto,
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PDF (267KB)
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ISSN:0094-243X
DOI:10.1063/1.40647
出版商:AIP
年代:1991
数据来源: AIP
|
| 6. |
Selective growth of InP/GaInAs heterostructures using metalorganic molecular beam epitaxy |
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AIP Conference Proceedings,
Volume 227,
Issue 1,
1991,
Page 21-24
Y. L. Wang,
A. Feygenson,
R. A. Hamm,
D. Ritter,
J. S. Weiner,
H. Temkin,
M. B. Panish,
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PDF (112KB)
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ISSN:0094-243X
DOI:10.1063/1.40614
出版商:AIP
年代:1991
数据来源: AIP
|
| 7. |
In situmass spectrometric analysis of the mechanism of selective‐area epitaxy by MOMBE |
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AIP Conference Proceedings,
Volume 227,
Issue 1,
1991,
Page 25-28
Y. Ohki,
Y. Hiratani,
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ISSN:0094-243X
DOI:10.1063/1.40615
出版商:AIP
年代:1991
数据来源: AIP
|
| 8. |
Application of migration‐enhanced epitaxy to novel semiconductor structures |
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AIP Conference Proceedings,
Volume 227,
Issue 1,
1991,
Page 29-32
Y. Horikoshi,
H. Yamaguchi,
T. Sudersena Rao,
S. Ramesh,
N. Kobayashi,
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PDF (177KB)
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ISSN:0094-243X
DOI:10.1063/1.40616
出版商:AIP
年代:1991
数据来源: AIP
|
| 9. |
Photoluminescence characterization of compound semiconductor optoelectronic materials |
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AIP Conference Proceedings,
Volume 227,
Issue 1,
1991,
Page 34-37
G. E. Stillman,
S. S. Bose,
A. P. Curtis,
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PDF (157KB)
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ISSN:0094-243X
DOI:10.1063/1.40661
出版商:AIP
年代:1991
数据来源: AIP
|
| 10. |
Photoluminescence mapping: New technique to characterize materials and structures for fabrication of photonic devices |
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AIP Conference Proceedings,
Volume 227,
Issue 1,
1991,
Page 38-41
Maciej Bugajski,
Jacek Ornoch,
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PDF (284KB)
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摘要:
Since the fabrication of photonic devices is a complex and expensive process it is highly desirable to characterize both starting material and device structures after each step of technological process. The ideal candidate which meets the production and research criteria is photoluminescence mapping technique. In this paper we describe apparatus for measuring photoluminescence over the entire wafer and discuss a number of applications of this technique.
ISSN:0094-243X
DOI:10.1063/1.40618
出版商:AIP
年代:1991
数据来源: AIP
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