摘要:

The Photovoltaic Manufacturing Technology (PVMaT) project is a historic government/industry R&D partnership composed of joint activities between the federal government (through the U.S. Department of Energy) and members of the U.S. photovoltaic (PV) industry. Started in early 1990, it is designed to assist the U.S. PV industry in improving manufacturing processes, accelerating manufacturing cost reductions for PV modules, increasing commercial product performance, and generally laying the groundwork for substantially scaling up U.S.‐based PV manufacturing plant capabilities.

ISSN:0094-243X    

DOI:10.1063/1.42896

出版商:AIP    

年代:1992

数据来源: AIP

摘要:

The utilization of GaAs in photovoltaic (PV) applications has been hindered by the cost of substrates and processing. This paper examines the cost effectiveness of GaAs cells for use in concentrator modules when produced at the 10 to 50 MW level per year. Information on costs associated with substrates, epitaxial processing, and subsequent device fabrication will be compared to allowable costs as projected by the US Department of Energy (DOE). The high cot of GaAs solar cells can be mitigated by use of low‐cost substrates or high‐concentration systems. The costs then can be accommodated when the production level is sufficiently high to take advantage of economies of scale in device processing and substrate price benefits when procured at high volumes. We have found that development of processing equipment, both for the epitaxial growth and device processing, is the key to obtaining production costs consistent with DOE goals. Successfully achieving these cost goals for GaAs technology at 1000 suns concentration is likely.

ISSN:0094-243X    

DOI:10.1063/1.42947

出版商:AIP    

年代:1992

数据来源: AIP

摘要:

The status of development of CdTe/CdS devices and modules at Photon Energy, Inc. includes attaining milestones such as: * Efficiencies of 12.7% have been achieved on small area devices. * Modules with areas of 929 cm2have achieved over 8% aperture area efficiency (active area up to approximately 10%).* Modules with areas of 3716 cm2have been tested at NREL at 23.1 watts (21.3 watts, normalized via a pyranometer). * Life testing at NREL (and PEI) shows no inherent stability problem within the measurement error.

ISSN:0094-243X    

DOI:10.1063/1.42912

出版商:AIP    

年代:1992

数据来源: AIP

摘要:

Data is presented on single‐junction amorphous silicon photovoltaic devices with 3000 to 5000 Angstrom thicki‐layers which have stabilized efficiencies around 6%. Light‐soaking studies oni‐layers prepared under the conditions used in the device fabrication show no decrease in photoconductivity resulting from light soaking.

ISSN:0094-243X    

DOI:10.1063/1.42887

出版商:AIP    

年代:1992

数据来源: AIP

摘要:

Solar cells fabricated from various III‐V compounds have recently produced very high laboratory conversion efficiencies approaching 29% for single junction and 35% for multijunction structures under concentrated illumination. However, due to their relatively limited availability, few of these devices have been incorporated into actual concentrator module structures. Details are presented from two development efforts which have incorporated III‐V cells into high efficiency prototype concentrator modules: 1) Varian’s GaAs module operating at 1000 suns with flat fresnel lenses; and 2) Boeing’s tandem GaAs/GaSb module operating at 50 suns with Entech’s domed fresnel lenses.

ISSN:0094-243X    

DOI:10.1063/1.42895

出版商:AIP    

年代:1992

数据来源: AIP

摘要:

The process sequence for producing 10% efficient Spheral SolarTMcells from upgraded metallurgical grade silicon spheres bonded in aluminum foil was presented at a recent conference.1Certain design criteria were used to generate the process schedule and these criteria will be described in this paper. Further discussion regarding pilot line equipment and operation will be reserved for a future publication.

ISSN:0094-243X    

DOI:10.1063/1.42932

出版商:AIP    

年代:1992

数据来源: AIP

摘要:

Silicon‐Film Product III is being developed into a low cost, stable device for large scale terrestrial power applications. The Product III structure is a thin (<100 &mgr;m) polycrystalline silicon layer on a non‐conductive supporting ceramic substrate as illustrated in Figure 1. The presence of the substrate allows cells to be isolated and interconnected monolithically. The long term goal for the product is over 18% conversion efficiency on areas greater than 1200 cm2. The high efficiency will be based on polycrystalline thin silicon incorporated into a light trapping structure with a passivated back surface. Short term goals are focused on the development of large area ceramics, a monolithic interconnection process, and fabricating 100 cm2solar cells.

ISSN:0094-243X    

DOI:10.1063/1.42939

出版商:AIP    

年代:1992

数据来源: AIP

摘要:

Amorphous silicon alloy based triple junction solar cells and modules with initial efficiencies of approximately 11% have been developed. These devices are expected to exhibit less than a 20% loss before stabilizing. An improved transparent front contact and silicon carbide alloys promise to raise conversion efficiencies to 13%–14%.

ISSN:0094-243X    

DOI:10.1063/1.42942

出版商:AIP    

年代:1992

数据来源: AIP

摘要:

Multijunction amorphous silicon alloy‐based solar cells and modules offer the potential of obtaining high efficiency with long‐term stability against light‐induced degradation. We have studied the stability of the component cells of the multijunction devices prepared under different deposition conditions. We observe a definite correlation between the microstructure of the intrinsic material and initial and light‐degraded performance of the cells. Using suitable deposition conditions and optimum matching of the component cells, we have fabricated double‐junction dual‐bandgap cells which show stabilized active‐area efficiency of 11% after 600 hours of one‐sun illumination at 50 °C. Double‐junction and triple‐junction modules of 900 cm2area have been fabricated, and the performance of these panels will be discussed.

ISSN:0094-243X    

DOI:10.1063/1.42943

出版商:AIP    

年代:1992

数据来源: AIP

摘要:

We discuss two aspects of recent work at NREL related to thin‐layer crystalline silicon for photovoltaic (PV) use. One is our attainment of procedures for controlled float‐zone (FZ) growth, wafering, and double‐side polishing of high‐purity multicrystalline silicon with a range of grain sizes (about 0.1–1.0 mm) and wafer thicknesses (40–350 &mgr;m). These procedures will be used to study grain size/thickness/solar cell performance relationships. The other aspect is growth of thin (5–50 &mgr;m) silicon layers from −950 °C copper solution on (111) single‐crystal silicon substrates for studying variations in growth properties and characteristics of the thin Si layers.

ISSN:0094-243X    

DOI:10.1063/1.42944

出版商:AIP    

年代:1992

数据来源: AIP