摘要:

This paper reviews the status of EPV’s 1 ft2CIS pilot line, presents analyses regarding the incorporation of gallium, and describes a third generation compound formation/selenization machine currently coating 18″×46″ substrates. Uniformity maps of CIS deposited over this area are presented. ©1996 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.49367

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

Recent effort at Solarex has been directed toward moving the conversion efficiency of CIGS based modules closer to that demonstrated for small area cells of the same material. Analysis of module structures indicates that much of the gap between device and module performance is due to the difficulty in achieving complete current collection in the large area segments used in modules. Optimization of module design for current collection at the operating point is strongly influenced by the interconnect quality. The development of robust, low resistivity interconnects with minimal area loss is crucial to achievement of high module efficiencies. In this work we report on the influence of module material and interconnect parameters on module conversion efficiency, and the recent progress resulting in a substantial reduction in interconnect resistivity and width. ©1996 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.49402

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

This paper reviews the application of Statistical Process Control (SPC) as well as other statistical methods to the development of thin film CuInSe2‐based module fabrication processes. These methods have rigorously demonstrated the reproducibility of a number of individual process steps in module fabrication and led to the identification of previously unrecognized sources of process variation. A process exhibiting good statistical control with 11.4% mean module efficiency has been demonstrated. ©1996 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.49398

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

CI(G)S films with Ga concentrations ranging from 0% to 75% were grown on Mo/glass substrates using the H2Se selenization technique and various annealing steps. These films were used to fabricate glass/Mo/CI(G)S/CdS/ZnO solar cells with open circuit values ranging from 0.4 V to 0.75 V. Graded absorber layers of CI(G)S containing 20% Ga were used to fabricate submodules of 145 cm2area with AM1.5 conversion efficiencies close to 10%. ©1996 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.49416

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

This paper summarizes SCI’s continuing effort in the improvement of large‐area CdS/CdTe module performance through process optimization. Alternative methods to the conventional CdCl2heat treatment have been developed. Comprehensive accelerated stress tests have demonstrated satisfactory stability on cells and modules of different sizes. ©1996 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.49422

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

CdTe thin film solar cells have been fabricated on a variety of glass substrates (borosilicate and soda lime). The CdS films were deposited to a thickness of 500–2000 A˚ by the chemical bath deposition (CBD), rf sputtering, or close spaced sublimation (CSS) processes. The CdTe films were deposited by CSS in the temperature range of 450–625 °C. The main objective of this work is to fabricate high efficiency solar cells using processes that can meet low cost manufacturing requirements. In an attempt to enhance the blue response of the CdTe cells, ZnS films have also been prepared (CBD, rf sputtering, CSS) as an alternative window layer to CdS. Device behavior has been found to be consistent with a recombination model. ©1996 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.49366

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

Three approaches to thin‐film Cu(In,Ga)Se2absorber fabrication are considered. They are generically described in terms of the sequential or concurrent nature of source material delivery, selenium delivery, and compound formation. A two‐stage evaporation process successfully produced the absorber component of a world‐record, 17.1% efficient solar cell. Alternative approaches that reduce the requirements for high substrate temperatures are considered. The relationship between absorber process parameters, band gap profile, and device performance are examined. Engineering the [Ga]/([Ga]+[In]) profile in the absorber has led to the reported advances. ©1996 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.49376

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

The present developments related to Chalcopyrite‐based thin film solar cells are reported. Recent achievement include CuInS2based solar cells with efficiencies in the order of 12% and the development of Cd free devices with efficiencies of more than 15%. Submodules based on coevaporation with areas up to 100 cm2have been developed and aperture area efficiencies up to 10.2% have been achieved. Reactors for the deposition of submodules with an area of 30×30 cm2are put into operation. ©1996 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.49390

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

This paper details preliminary results obtained in incorporating low H content, high substrate temperature hot wire (HW) deposited amorphous silicon material into a substrate solar cell structure. By necessity, since the learning curve for this complete structure involves metal/n‐i/Schottky barrier structure optimization, a large part of the results are focused on this (partial) structure. We have found that the treatment of the top surface of the HWilayer during cooling is crucial to device performance. Without any particular attention paid to the treatment of this surface while the sample is cooling from its high deposition temperature, a significant amount of H diffuses out of the sample during the cooling process, particularly near the surface, resulting in devices with very poor photovoltaic properties. By designing a surface treatment to address this problem, we have been able to deposit HW Schottky structures with device characteristics as good as the best glow discharge devices produced in our laboratory. We present data concerning these surface treatments, and how they influence the H content at thei/Pd interface. ©1996 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.49396

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

We discuss the research directions taken to improve the stable efficiency of amorphous silicon alloy multijunction modules. Use of hydrogen dilution during deposition has resulted in improvement of initial efficiency and stability of the component cells in the triple‐junction structure. An innovative laser‐interconnected module design has resulted in the reduction of optical and electrical losses in the module down to 1%. ©1996 American Institute of Physics.

ISSN:0094-243X    

DOI:10.1063/1.49361

出版商:AIP    

年代:1996

数据来源: AIP