1. |
Field-ion microscopy |
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Contemporary Physics,
Volume 11,
Issue 3,
1970,
Page 209-226
H.N. Southworth,
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PDF (3184KB)
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摘要:
Field-ion microscopy is a comparatively new technique for studying the internal structure of solids. It is also unique in that it is able to resolve the individual atoms composing the solid structure.
ISSN:0010-7514
DOI:10.1080/00107517008202178
出版商:Taylor & Francis Group
年代:1970
数据来源: Taylor
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2. |
Semiconducting glasses part 1: Glass as an electronic conductor |
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Contemporary Physics,
Volume 11,
Issue 3,
1970,
Page 227-255
A.E. Owen,
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PDF (1787KB)
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摘要:
The formation and structure of glass is described and elementary wave-mechanics is used to show that, despite the disordered liquid-like configuration, electron energy-bands will nevertheless be formed in semiconducting glasses. The main effect of the disordered structure is to cause the formation of a high density of localized states in what would otherwise have been regions of forbidden energy. The localized states behave as traps for carriers and will have an important influence on the transport mechanisms in semiconducting glasses. The modes of transport are discussed and it is shown that, although a well defined energy gap does not exist, there is instead a ‘mobility gap’ which has a similar effect on electrical conduction.
ISSN:0010-7514
DOI:10.1080/00107517008202179
出版商:Taylor & Francis Group
年代:1970
数据来源: Taylor
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3. |
Semiconducting glasses part II: Properties and interpretation |
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Contemporary Physics,
Volume 11,
Issue 3,
1970,
Page 257-286
A.E. Owen,
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PDF (1821KB)
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摘要:
The properties of amorphous germanium and silicon, vitreous selenium chalcogenide glasses and transition-metal oxide glasses are described and discussed. Much of the current experimental data can be interpreted within the framework of the theoretical models developed in Part I, in which the main influence of disorder is the so-called ‘tail of localized states’. Typical semiconducting properties are observed and in many cases the amorphous materials behave rather like ordinary intrinsic semiconductors. It must be recognized, however, that at the moment only a qualitative interpretation is possible and many problems remain to be solved.
ISSN:0010-7514
DOI:10.1080/00107517008202180
出版商:Taylor & Francis Group
年代:1970
数据来源: Taylor
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4. |
Electrical and magnetic units in the système international |
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Contemporary Physics,
Volume 11,
Issue 3,
1970,
Page 287-300
D.H. Smith,
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PDF (856KB)
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摘要:
The article deals with the rationalized MKS system of electrical units within the SI system in relation to the requirements of school and university teaching. The difficulties arising from the availability of two possible sets of units within the MKS system, those suggested by Kennelly and by Somefield, are discussed.
ISSN:0010-7514
DOI:10.1080/00107517008202181
出版商:Taylor & Francis Group
年代:1970
数据来源: Taylor
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5. |
The introduction of SI in magnetism |
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Contemporary Physics,
Volume 11,
Issue 3,
1970,
Page 301-306
L.F. Bates,
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PDF (382KB)
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摘要:
A note dealing with the use of SI in the description of magnetic properties of matter, especially permanent magnet materials: it attempts to show that there is no serious difficulty in presenting classical and recent concepts in SI.
ISSN:0010-7514
DOI:10.1080/00107517008202182
出版商:Taylor & Francis Group
年代:1970
数据来源: Taylor
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6. |
Book reviews |
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Contemporary Physics,
Volume 11,
Issue 3,
1970,
Page 307-310
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PDF (394KB)
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ISSN:0010-7514
DOI:10.1080/00107517008202183
出版商:Taylor & Francis Group
年代:1970
数据来源: Taylor
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7. |
Books received |
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Contemporary Physics,
Volume 11,
Issue 3,
1970,
Page 311-312
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PDF (99KB)
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ISSN:0010-7514
DOI:10.1080/00107517008202184
出版商:Taylor & Francis Group
年代:1970
数据来源: Taylor
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