摘要:

The characteristics of several elements for binary tantalum alloys, such as crystal structure, x‐ray absorption, and dry‐etching properties were systematically investigated. As a result, TaGe, TaSi, TaRe, and TaTi were selected as potential candidates for x‐ray mask absorbers. We deposited these Ta alloys using conventional magnetron sputtering. The stress in the TaXfilms was controlled more precisely than in Ta films. It was found that TaGe was one of the most suitable materials based on x‐ray absorption, stress control, and fine pattern fabrication.

ISSN:0734-211X    

DOI:10.1116/1.589054

出版商:American Vacuum Society    

年代:1996

数据来源: AIP

摘要:

X‐ray mask fabrication using a subtractive process and a 30 kV acceleration voltage electron beam writer was investigated. The dose margin for delineation of fine resist patterns is increased by reducing the resist thickness. Delineation of 0.1 μm patterns in a 0.1‐μm‐thick resist has approximately the same dose margin as that of 0.2 μm patterns in a 0.3‐μm‐thick resist. Width error in SiO2patterns used as an etching mask is decreased by reducing the thickness and adding SF6to CF4etching gas. Tantalum absorbers can be etched very accurately with electron cyclotron resonance ion stream etching by taking microloading effects and undercutting into account. Using the 0.1‐μm‐thick resist, x‐ray masks with 0.1 μm large scale integrated circuit patterns are almost perfectly produced and have a critical dimension accuracy of 13 nm.

ISSN:0734-211X    

DOI:10.1116/1.589055

出版商:American Vacuum Society    

年代:1996

数据来源: AIP