摘要:

A stress compensation technique for a tungsten (W) absorber for an x‐ray mask has been developed. Tungsten films with a thickness of 500 nm were deposited using the magnetron dc sputtering method in an argon (Ar) working gas at a power of 1 kW. A high film density (18.0 g/cm3) was obtained at a low working gas pressure. Neon (Ne), Ar, krypton (Kr) and silicon (Si) ion implantations were performed with a projection range (Rp) of 50 nm, at doses of 1014–1015ions/cm2to modify the absorber stress. The ion implantation reduced the film stress to less than 5×107dyn/cm2. Ar and Kr implanted film stress stability was less than 5×107dyn/cm2. Ne and Si implanted film stresses were not stable.

ISSN:0734-211X    

DOI:10.1116/1.585280

出版商:American Vacuum Society    

年代:1991

数据来源: AIP

摘要:

We have grown electron‐beam‐induced resist and aluminum from alkyl naphthalene and trimethyl aluminum, respectively. The growth mechanism of the electron‐beam‐induced materials has been suggested to be bridge‐formation by the physically adsorbed molecules of the sources. We believe that the bridge‐formation is driven by direct interaction with electrons, not by diffusive processes such as local heating and catalytic reactions. The observed growth rate is consistent with the one calculated from the heat of physical adsorption. The method is of potential interest for stereo‐resist and also for selective atomic layer epitaxy.

ISSN:0734-211X    

DOI:10.1116/1.585281

出版商:American Vacuum Society    

年代:1991

数据来源: AIP

摘要:

Focused ion beams of Be and Si were used to expose the following resists: PMMA, HEBR‐214, KTI 820, and Microposit 2400. The resist thickness remaining for various development times was measured. For example, the minimum dose of 200 keV Be ions needed to expose 6800 Å thick PMMA varied from 7×1012to 2×1013ions/cm2depending on development time. HEBR was found to act as either a positive or negative resist depending on dose. Exposures were also carried out in resist whose thickness exceeded the ion range. The effective PMMA exposure ranges of 200 keV Be ions and 200 keV Si ions were found to be 1.2 and 0.45 μm, respectively.

ISSN:0734-211X    

DOI:10.1116/1.585282

出版商:American Vacuum Society    

年代:1991

数据来源: AIP

摘要:

InP layers were grown on (100) GaAs substrates by gas‐source molecular beam epitaxy and then were annealed by the rapid thermal annealing (RTA) method. The effects of annealing time and temperature on crystalline structure were studied by double‐crystal x‐ray diffraction. Significant improvement in crystalline quality was observed, due to RTA. The smallest linewidth was 315 s of arc for the 2‐μm‐thick layers upon annealing at 940 °C for 10 s. Using lower temperatures and longer annealing times, the linewidths remained broader but the loss of phosphorus was reduced.

ISSN:0734-211X    

DOI:10.1116/1.585283

出版商:American Vacuum Society    

年代:1991

数据来源: AIP

摘要:

The performance of AuGe contacts ton‐type InP layers, formed by implantation of Si into semi‐insulating InP substrates and activated by rapid thermal annealing within an enclosed SiC‐coated graphite susceptor (700 °C, 10 s) was studied. These contacts were purely ohmic with the lowest contact resistivity value of 1×10−7Ω cm2which was measured at the contact to 3×1018cm−3Si‐doped InP substrate after rapid thermal processing at 375 °C for 30 s.

ISSN:0734-211X    

DOI:10.1116/1.585284

出版商:American Vacuum Society    

年代:1991

数据来源: AIP

摘要:

Cerium dioxide was employed as a gate insulator for an enhancement‐typen‐channel metal–oxide–semiconductor (MOS) transistor. Cerium was evaporated in a tungsten boat and immediately oxidized for oxide uniformity. The use of CeO2as a gate oxide in MOS transistor yielded a low positive threshold voltage with negligible interface charge effects. This resulted in the transistor performing as an enhancement type device.

ISSN:0734-211X    

DOI:10.1116/1.585285

出版商:American Vacuum Society    

年代:1991

数据来源: AIP

ISSN:0734-211X    

DOI:10.1116/1.585783

出版商:American Vacuum Society    

年代:1991

数据来源: AIP