摘要:

Pure aluminum has been utilized as contact material between power darlington silicon wafer (100 A, 500 V) and molybdenum disk as a back side contact for lightly N‐doped substrate. Appropriate temperature profile, assembly fixtures, and optimum aluminum thickness has been used during alloying of silicon wafer with moly disk to minimize silicon dissolution so that segregation of silicon at the liquid–solid interface takes place on silicon side and aluminum freezes out towards moly side giving low resistance ohmic contact, low saturation voltage, and low leakage. Metal base disk thickness has been determined optimally with respect to thickness of device wafer to provide minimum bow of fusion. Evaluation of voids at the moly–aluminum and aluminum–silicon interface indicated their absence at 700 °C bonding temperature.

ISSN:0734-211X    

DOI:10.1116/1.585018

出版商:American Vacuum Society    

年代:1990

数据来源: AIP

ISSN:0734-211X    

DOI:10.1116/1.585019

出版商:American Vacuum Society    

年代:1990

数据来源: AIP