摘要:

Fiberlike protrusions with a novel structure were found to grow on monocrystalline InP sputtered with 1–3 keV Ar+at 100 °C. The fibers, which lengthened toward the incident ion beam, were of amorphous InP, except at the tip area receiving the highest ion‐flux density. The tip area, including the growth front, was comprised of In and InP single crystals, the In crystals forming topotaxially in the core of the very tip. The crystallization at the tip of these fibers was no doubt attributable to the impact of Ar+ions, so it may be termed a case of ‘‘ion‐induced crystallization,’’ which is an inverse process of the ion‐induced amorphization of crystalline semiconductors.

ISSN:0734-211X    

DOI:10.1116/1.587559

出版商:American Vacuum Society    

年代:1994

数据来源: AIP

摘要:

A new phase defect repair technique of phase‐shifting masks made using conventional chrome‐on‐quartz blanks is proposed. This technique is based on the planarization of defects and dry etching of the defective area under conditions where the planarization layer etch rate is made equal to the quartz etch rate. The process consists of defining an opening on top of the defective area of the mask in a photoresist layer covering the planarization layer using UV exposure. Phase defects can, therefore, be etched away independent of their three‐dimensional profile. An additional advantage of this technique is that the lithography for defect repair and therefore the repair itself is automatically self‐aligned to the chrome edge. The feasibility of this process defect repair has been demonstrated using a test mask with programmed phase defects. Wafer printability results show that the defects were effectively removed. This technique has been used to successfully fabricate a phase‐shifting mask contact level for a 4 Mbit DRAM product.

ISSN:0734-211X    

DOI:10.1116/1.587560

出版商:American Vacuum Society    

年代:1994

数据来源: AIP

ISSN:0734-211X    

DOI:10.1116/1.587561

出版商:American Vacuum Society    

年代:1994

数据来源: AIP