摘要:

Different surface reconstructions were observed during growth of ZnSxSe1−x(0≤x≤1) and the growth conditions under which these occur were determined. Zn‐rich ZnSe growth shows ac(2×2) surface reconstruction, while under Se‐rich growth a (2×1) surface is observed. On ZnSxSe1−x(x≤0.16) and on ZnSe/ZnSxSe1−xsuperlattice structures a (5×) reconstruction is observed. Se desorption experiments suggest that Se is bound as a dimer to a Se stabilized ZnSxSe1−xsurface. The intensity of the specular beam increases after switching from molecular‐beam epitaxy growth of ZnSe to atomic layer epitaxy growth. Implications on the ZnSe growth mechanism are discussed.

ISSN:0734-211X    

DOI:10.1116/1.584370

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

ISSN:0734-211X    

DOI:10.1116/1.584371

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

ISSN:0734-211X    

DOI:10.1116/1.584372

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

摘要:

In this paper we suggest mechanisms by which light interacts with surface species during growth using molecular‐beam epitaxy (MBE) and related techniques. Such mechanisms are discussed, not only for impurity incorporation, but also for the growth of undoped compound semiconductors. This work provides a conceptual framework for understanding these light‐induced processes that, in and of themselves, represent a major breakthrough in the MBE fabrication of such materials. It opens up the possibility of makingp–njunctions in II–VI materials and the subsequent potential for their use in applications requiring new kinds of electronic, photonic, and photolithographic devices.

ISSN:0734-211X    

DOI:10.1116/1.584374

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

ISSN:0734-211X    

DOI:10.1116/1.584330

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

摘要:

We have studied, using reflection high energy electron diffraction (RHEED), the initial growth stages of ZnSe layers grown by molecular beam epitaxy (MBE) on GaAs exhibiting various surface terminations. The structural quality of the ZnSe layers was assessed by transmission electron microscopy (TEM). We have observed a preference for two‐dimensional nucleation on As‐terminated GaAs substrates, whether epitaxial or bulk. On Ga‐terminated surfaces a transitional region of three‐dimensional growth forms initially. The different behaviors may reflect the electronic imbalance present in the growing GaAs/ZnSe interface. While defect free, thin layers of ZnSe are best obtained on As‐terminated GaAs, the initial three‐dimensional growth region on the Ga‐rich surfaces appears to reduce the density of extended faults formed in thick ZnSe layers due to the lattice mismatch with GaAs.

ISSN:0734-211X    

DOI:10.1116/1.584331

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

摘要:

A review of our recent achievements in the growth of Hg1−xCdxTe by molecular‐beam epitaxy is presented here. The influences of the substrate temperature, the crystallographic orientation, and the nature of the substrate on the properties of Hg1−xCdxTe are discussed in detail. We show that to grow high‐quality material with good uniformity in terms of the alloy composition and the doping by crystal stoichiometry deviation, the substrate temperature should be between 180 °C andTmax. We report mobilities as high as 5.0×1205cm2 V−1 s−1forn‐type layers and 1.2×103cm2 V−1 s−1forp‐type layers, achieved by precisely controlling the growth parameters. We illustrate that the Hg condensation coefficient is influenced by the crystallographic orientation. Our results show that for Hg1−xCdxTe grown on both the (111)Band the (100) faces of CdTe or GaAs the Hall mobilities are very high and comparable. We report our important achievement of the successful growth of 2‐in.‐diam Hg1−xCdxTe films on GaAs(100), with Δx/x̄ as low as 0.7% forx̄=0.218 (Δxis the standard deviation andx̄ is the mean value), Δt/t̄ as low as 0.6% for the layer thickness, excellent uniformity in the doping, an high electron or hole mobility. This illustrates the excellent control that our group has achieved toward the growth of this material by molecular‐beam epitaxy.

ISSN:0734-211X    

DOI:10.1116/1.584332

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

摘要:

Oscillations in the intensity of reflection high‐energy electron diffraction (RHEED) patterns are observed for Fe, Ni, Au, and Mn overlayers epitaxially grown in various combinations on Fe, Ni, Au, Ag, and Ru substrates. Fe whickers are nearly ideal substrates for the study of RHEED and RHEED oscillations during growth. Oscillations for metals and semiconductors show similar dependence on temperature, diffraction angles, and surface impurities.

ISSN:0734-211X    

DOI:10.1116/1.584333

出版商:American Vacuum Society    

年代:1988

数据来源: AIP