摘要:

Carrier scattering due to surface roughness at a nonideal interface may be an important mechanism in reducing carrier mobility and ultimately semiconductor device performance. We have investigated the role of this scattering mechanism in the low and high field transport of carriers parallel to oxide–semiconductor and heterojunction interfaces through analytic solutions and Monte Carlo simulation of the carrier dynamics. Quantitative differences between the scattering rates in the two types of systems arise from image potential contributions due to the presence of the dielectric in the oxide–semiconductor system which increases the scattering rate relative to a homogeneous system. For the InP/SiO2system, surface scattering limits the surface channel mobility, even at room temperature. However, from detailed Monte Carlo simulation of high field transport inn‐type InP inversion layers, we find that roughness scattering plays a relatively small role in reducing the peak and saturated carrier velocities since interface scattering is elastic and decreases with electron temperature. Thus, the short channel behavior in InP metal–oxide semiconductor field effect transistors may be comparatively better than that indicated by long channel results.

ISSN:0734-211X    

DOI:10.1116/1.584797

出版商:American Vacuum Society    

年代:1989

数据来源: AIP

摘要:

We report a series of magnetotransport measurements on two double barrier resonant tunneling devices based onn‐GaAs/(AlGa)As. The central GaAs wells have widths of 60 and 120 nm. Many well‐defined quantum resonances are observed in the conductance even at room temperature and up to 70 resonances are observed at liquid helium temperatures. The existence of these resonances indicates that a significant fraction of the conduction electrons travel ballistically over distances>0.3 μm. When a magnetic field is applied in the plane of the well (B⊥J) tunneling takes places into two distinct types of quantum states: traversing states in which the electrons interact with both barriers and skipping states in which the electrons only interact with the emitter barrier. Rotation of the magnetic field in the (100) plane parallel to the barriers reveals the anisotropy in the Γ conduction band at high electron energies.

ISSN:0734-211X    

DOI:10.1116/1.584798

出版商:American Vacuum Society    

年代:1989

数据来源: AIP