摘要:

In the past few years, electrostatic chucks (ESCs) have become much more widespread in semiconductor manufacturing equipment. In addition to the elimination of moving parts, ESCs hold the promise to decrease the wafer edge exclusion, that is, to allow more good chips to be made on each wafer. A number of technical, material, and business challenges remain in making ESCs workable and reliable in all tools across the semiconductor factory, or fab. We will discuss issues of clamping force, clamping and declamping time, and wafer temperature control, describing how they affect design and choice of materials. The effect of these choices on adapting ESCs to various tools over various temperature ranges will also be discussed. The role of models and test results in accelerating development will be addressed. Finally, we will list some of the business challenges to implementing ESCs. Despite technical successes, many high‐volume fab lines are always reluctant to risk installing new technology, despite promises of improvement. SEMATECH has addressed these issues with the Working Groups that address standard specifications, study early testing results, and share manufacturing performance data.

ISSN:0734-211X    

DOI:10.1116/1.588108

出版商:American Vacuum Society    

年代:1995

数据来源: AIP

摘要:

Semiconductor processing requirements are creating a need for better equipment capabilities with respect to process control. The goal of this paper is to propose the required capabilities and suggest what issues must be addressed in order for the equipment to have these capabilities. This paper will focus on the why and how of control, such as the components and various implementation forms of controllers, rather than specific algorithms. The major concepts of process control will be presented, such as multivariable control systems. The basic requirements for control to be possible will also be introduced. The role of metrology as pertaining to process control methods will be presented. The involvement of the process engineer with respect to control will be highlighted so that the proposed requirements for the flexibility and configurability of the equipment control system will be better understood. Examples of process control applications in semiconductor manufacturing will assist in explaining the concepts introduced in this paper.

ISSN:0734-211X    

DOI:10.1116/1.588109

出版商:American Vacuum Society    

年代:1995

数据来源: AIP

摘要:

Mass spectrometry has been exploited for rapid real‐time sensing of both reactant and product species in single‐wafer rapid thermal chemical vapor deposition (RTCVD) of polycrystalline Si from SiH4. Active mass spectrometric sampling at pressures to 5 Torr is achieved using two‐stage differential pumping of a sampling aperture in the exhaust stream, leading to response times as short as ∼3 sec to concentration and pressure changes in the reactor during a process carried out in ∼30 sec. In addition to reactant species, gaseous reaction byproducts have been identified and differentiated from cracking fragments of the reactant through relative intensities of mass fragments as a function of wafer temperature (i.e., reaction rate). For RTCVD of poly‐Si from SiH4, carried out in the range 450–800 °C at 5 Torr in 10% SiH4/Ar, mass spectra reveal not only the time dependence of reactant (monitored by SiH2+, 30 amu), but also—at higher temperatures—reactant depletion and product generation (from H2+, 2 amu). These results demonstrate a basis for using mass spectrometry in real‐time process diagnostics and control.

ISSN:0734-211X    

DOI:10.1116/1.588110

出版商:American Vacuum Society    

年代:1995

数据来源: AIP