摘要:

The direct photolithographic definition of insulating, semiconductive, and conductive films was achieved by pyrolyzing positive photoresist (HPR‐206). Control of the feature dimensions was realized by two setps, UV irradiation followed by slowly increasing the pyrolysis temperature. A cross‐linked polymeric shell is produced which is resistant to pattern flow. Parameters investigated for their effect on final feature size include UV dose, pyrolysis atmosphere, rate of temperature increase, pyrolysis temperature, and original feature size. The preparation of patterned films from pyrolyzed photoresist eliminates several processing steps and demonstrates the potential of direct lithography of carbon for integrated circuit manufacture.

ISSN:0734-211X    

DOI:10.1116/1.583284

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

摘要:

SiO2films were deposited on 2 in. Si(100) wafers at an oxygen pressure of 10−2Pa and substrate temperature of 300 °C using a nozzle beam deposition technique. High purity SiO2grains were evaporated in a graphite crucible at a temperature of 1500 °C. The evaporated species were then ejected through a nozzle and were partially ionized by electron bombardment prior to deposition. The index of refraction and infrared absorption spectrum of the films were found to depend strongly on the ionization current and acceleration voltage applied to the beam. The thickness and refractive index of the film are uniform over the entire 2 in. wafer if the applied acceleration voltage is less than 1 kV.

ISSN:0734-211X    

DOI:10.1116/1.583285

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

ISSN:0734-211X    

DOI:10.1116/1.583286

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

摘要:

Polymers are often used as ion implantation masks for semiconductor processing, but there is a wide (nearly an order of magnitude) disagreement among calculated values that appear in the literature on the ranges of light ions in these materials. Since shrinking device geometries require reduced mask thicknesses to maintain high resolution, accurate knowledge of ion ranges is important. Secondary ion mass spectroscopy (SIMS) has the sensitivity to determine profiles of implanted ions in many materials, but direct measurements on insulators is difficult because of charging effects. We have developed a technique to measure these profiles using variable polymer thicknesses and subsequent SIMS measurements in the underlying Si substrate. An analysis of the resulting SIMS profiles allow measurement of the projected range and standard deviation of the distribution as a function of energy. The range parameters for boron in two polymers are reported and compared with published calculations as well as with experimental values determined from indirect techniques.

ISSN:0734-211X    

DOI:10.1116/1.583287

出版商:American Vacuum Society    

年代:1985

数据来源: AIP