11. |
Influence of O2on EPR spectra of SiO2surface defects |
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Kristall und Technik,
Volume 14,
Issue 1,
1979,
Page 93-96
H.‐J. Tiller,
G. Rudakoff,
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ISSN:0023-4753
DOI:10.1002/crat.19790140112
出版商:WILEY‐VCH Verlag
年代:1979
数据来源: WILEY
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12. |
Magnetic properties of the CrSxTe1−x(x= 0−0.2) solid solutions |
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Kristall und Technik,
Volume 14,
Issue 1,
1979,
Page 97-105
G. I. Makovetskii,
G. M. Shakhlevich,
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摘要:
AbstractOn the basis of X‐ray, magnetic and neutron diffraction measurements the range of solubility in the CrSxTe1−x(x= 0−0.2) system has been established and the magnetic phase diagram of the system has been plotted. The decrease of magnetization at low temperature and the additional reflections in the neutron diffraction patterns are associated with the formation of noncollinear magnetic structure which is characterized by the antiferromagnetic component of the magnetic moments. This component has the orthorhombic unit cell with\documentclass{article}\pagestyle{empty}\begin{document}$ a_M = \sqrt {3a_0 } $\end{document},bM=a0,cM=c0. The character of the exchange interactions giving rise to this magnetic structure is disc
ISSN:0023-4753
DOI:10.1002/crat.19790140113
出版商:WILEY‐VCH Verlag
年代:1979
数据来源: WILEY
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13. |
Covalent bonding effect on magnetic susceptibility in AIIIBVsemiconductor compounds |
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Kristall und Technik,
Volume 14,
Issue 1,
1979,
Page 107-110
N. N. Sirota,
Ts. Z. Vitkina,
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摘要:
AbstractOn the basis of the expression for magnetic susceptibility of zinc blende semiconductors obtained earlier in the MOLKAO approximation (Sirota, Vitkina) the effect of the degree of covalency on the magnetic suceptibility is studied. The increase of covalency of bonding is shown to be accompanied by the shift of the center of gravity of the charge cloud to the center of bonding and by the increase of the Van Vleck paramagnetic term of the magnetic susceptibility.
ISSN:0023-4753
DOI:10.1002/crat.19790140114
出版商:WILEY‐VCH Verlag
年代:1979
数据来源: WILEY
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14. |
Investigation of nitrogen solubility process in silicon carbide |
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Kristall und Technik,
Volume 14,
Issue 1,
1979,
Page 111-116
S. K. Lilov,
Yu. N. Tairov,
V. F. Tsvetkov,
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摘要:
AbstractOn the basis of the epitaxial layers of SiC (N) grown from vapour phase by the sublimation method in a temperature interval (1900–2200) °C and at nitrogen partial pressures from 4 to 760 Torr has been determined the dependence of the nitrogen content in the epitaxial layers of SiC(N) on the nitrogen partial pressure and the temperature of growing. A thermodynamics analysis of the nitrogen solubility process in silicon carbide has been developed taking account of the electron‐hole interaction. The experimental and calculation results, we have obtained, allowed us to determine the partial mol solubility heat of nitrogen in
ISSN:0023-4753
DOI:10.1002/crat.19790140115
出版商:WILEY‐VCH Verlag
年代:1979
数据来源: WILEY
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15. |
Measurement of the shear viscosity in garnet high temperature solutions by a cylindrical rotation viscometer |
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Kristall und Technik,
Volume 14,
Issue 1,
1979,
Page 117-127
E. Sinn,
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摘要:
AbstractGarnet high temperature solutions, their solvents and binary systems consisting of lead oxide and one component out of the solute were investigated. The shear viscosity coefficients have been measured in a cylindrical rotation viscometer within the temperature range of liquidus or melting and not exceeding 1270°C. The logarithm of the shear viscosity in the simple systems PbO or PbOB2O3linearily depends on the reciprocal absolute temperature, however, the relationship in phase systems containing Fe2O3or Ga2O3is more complex. The shear viscosities of Y3Fe5O12or (Y, Sm)3(Fe, Ga)5O12solutions suitable for LPE experiments amount 0.20 to 0.23 g cm−1s−1near the liquidus temperatures. An effective average activation energy for shearing flow was estimated, its dependence on the temperature points to chemical equilibria reactions in the sol
ISSN:0023-4753
DOI:10.1002/crat.19790140116
出版商:WILEY‐VCH Verlag
年代:1979
数据来源: WILEY
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16. |
Eine neue absolute sin ϕi/sin ϕj‐Methode für die Bestimmung von Gitterparametern |
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Kristall und Technik,
Volume 14,
Issue 1,
1979,
Page 129-131
J. Vavrda,
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摘要:
AbstractDie reziproken Quadrate von Gitterparametern werden für ein‐, zwei‐ und dreiparametrige Gitter durch die Lösung von Lineargleichungen ermittelt. Die systematischen Abweichungen werden bei dieser Arbeitsweise total unterdrückt. Die Methode ist für viele Aufnahmenverfahren universell an
ISSN:0023-4753
DOI:10.1002/crat.19790140117
出版商:WILEY‐VCH Verlag
年代:1979
数据来源: WILEY
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17. |
Masthead |
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Kristall und Technik,
Volume 14,
Issue 1,
1979,
Page -
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PDF (40KB)
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ISSN:0023-4753
DOI:10.1002/crat.19790140101
出版商:WILEY‐VCH Verlag
年代:1979
数据来源: WILEY
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