摘要:

AbstractAn Hand charakteristischer Beispiele werden halbquantitative und quantitative Methoden zur Abschätzung bzw. Berechnung und Analyse von thermoelastischen Spannungen bei der Kristallzüchtung aus der Schmelze erläutert. Die Spezifik der Bildung thermoplastischer Spannungen in Kristallen mit unterschiedlichen rheologischen Charakteristiken wird betrachtet. Möglichkeiten zur Abschätzung der Versetzungsdichte und ihrer Verteilung im Kristall aus dem axialen Temperaturgradienten, der Größe und Verteilung der thermoelastischen Spannungen und dem Zustand der Spannungsrelaxation werden disk

ISSN:0023-4753    

DOI:10.1002/crat.19790140502

出版商:WILEY‐VCH Verlag    

年代:1979

数据来源: WILEY

ISSN:0023-4753    

DOI:10.1002/crat.19790140503

出版商:WILEY‐VCH Verlag    

年代:1979

数据来源: WILEY

摘要:

AbstractDifferent forms of oriented inclusions in single crystals of potassium dihydrogen phosphate (KDP) grown by gel method and from aqueous solutions are reported. Small rod like chain and channel types of liquid inclusions are illustrated. These inclusions are oriented along 〈001〉, 〈011〉 and 〈010〉 directions and are attributed to mother liquor trapped in the body of the crystal du

ISSN:0023-4753    

DOI:10.1002/crat.19790140504

出版商:WILEY‐VCH Verlag    

年代:1979

数据来源: WILEY

摘要:

AbstractnGaAsnGaN heterojunctions were fabricated by one‐stage conversion of monocrystalline GaAs under varying conditions. Surface and cross section study, performed by means of optical and electron microscopy, indicates that the growth kinetics is essentially controlled by transfer of ammonia molecules across the already grown nitride layer; the diffusion coefficient value at 700°C being 3.1 × 10−10cm2sec−1. Current‐voltage behaviour, describable by relations of the typeI=I0(T) exp (αV), appears to be dominated by tunneli

ISSN:0023-4753    

DOI:10.1002/crat.19790140505

出版商:WILEY‐VCH Verlag    

年代:1979

数据来源: WILEY

摘要:

AbstractUSb2single crystals were grown by three methods; I — Chemical vapour transport with iodine as transporting reagent, II — Crystallization from USb liquid solution, III — Crystallization from USbSn liquid solution. The morphology of growth and results of X‐ray topography examination of crystal surf

ISSN:0023-4753    

DOI:10.1002/crat.19790140506

出版商:WILEY‐VCH Verlag    

年代:1979

数据来源: WILEY

摘要:

AbstractWith the help of Monte‐Carlo computer simulation method we have investigated the growth of binary crystals having the structure anomally depended on temperature and the liquid phase composition. The dependences of the growth rate and component concentrations in the crystal volume on temperature for different liquid phase compositions were obtained. Kinetic phase diagrams are found here too. A comparison with the results obtained from analytical calculations was also made in this wor

ISSN:0023-4753    

DOI:10.1002/crat.19790140507

出版商:WILEY‐VCH Verlag    

年代:1979

数据来源: WILEY

摘要:

AbstractIn silicon MOS semiconductor devices precipitations were observed by TEM in the boron‐diffused regions. They were identified by using selected area diffraction, high resolution lattice plane imaging, Auger spectroscopy and microanalysis of X‐rays. The results lead to the conclusion that these particles consist of polycrystalline silicon and that oxygen and nitrogen, probably carbon too are concentrated inside the particles. The formation of these precipitations is only due to the technological process of the device manufactoring and does not depend on the silicon starting mater

ISSN:0023-4753    

DOI:10.1002/crat.19790140508

出版商:WILEY‐VCH Verlag    

年代:1979

数据来源: WILEY

摘要:

AbstractThis paper shows that hot H3PO4is a suitable etchant for the production of dislocation etch pits on {001}‐InP, (InGa)P, GaP, Ga(AsP), and {111}‐GaP. The effects upon etch pit morphology of the misorientation of samples and the type of dislocations are investigated in det

ISSN:0023-4753    

DOI:10.1002/crat.19790140509

出版商:WILEY‐VCH Verlag    

年代:1979

数据来源: WILEY

摘要:

AbstractA simple method is described for measurement of lattice parameters of thin heteroepitaxial layers by RHEED technique using the substrate as a calibration substance. Results are presented for special cases of I–III–VI2chalcopyrite type semiconductor epilayers on GaAs substrates. The accuracy of the method is in the order of about 5 ·

ISSN:0023-4753    

DOI:10.1002/crat.19790140510

出版商:WILEY‐VCH Verlag    

年代:1979

数据来源: WILEY

摘要:

AbstractIn this paper first neutronographic texture investigations for two‐phased steels are presented. From each of the phases three complete pole figures were measured. The analysis were carried out by means of the series expansion method. The three‐dimensional orientation distribution functions of all specimens are of tubular shape. For the interpretation of the differences to single‐phased steels the relationships for transformation by Kurdjumov‐Sachs and by Nishiyama were u

ISSN:0023-4753    

DOI:10.1002/crat.19790140511

出版商:WILEY‐VCH Verlag    

年代:1979

数据来源: WILEY