| 1. |
Der Verteilungskoeffizient von Mangan bei der Kristallisation von Silberchlorid aus der Schmelze |
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Kristall und Technik,
Volume 6,
Issue 5,
1971,
Page 57-60
J. Trnka,
M. Lébl,
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ISSN:0023-4753
DOI:10.1002/crat.19710060512
出版商:WILEY‐VCH Verlag
年代:1971
数据来源: WILEY
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| 2. |
Nachweis der Adsorption von Tensiden an Alkalihalogenid‐Spaltflächen mit Hilfe der elektronenmikroskopischen Autoradiographie |
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Kristall und Technik,
Volume 6,
Issue 5,
1971,
Page 61-63
H. A. Schneider,
H. Boudriot,
P. Matthé,
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ISSN:0023-4753
DOI:10.1002/crat.19710060513
出版商:WILEY‐VCH Verlag
年代:1971
数据来源: WILEY
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| 3. |
Effect of some impurities on the dissolution of NaHCO3 |
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Kristall und Technik,
Volume 6,
Issue 5,
1971,
Page 65-68
G. Bliznakov,
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摘要:
AbstractThe effect of organic surface active substances and some ionic impurities on the rate of dissolution of sodium bicarbonate has been studied. It was found that most of the substances investigated decrease the dissolution rate, the strongest effect being observed with Nekal BX an Ca2+. The results obtained may be used for decreasing the losses in sodium bicarbonate during its washing under industrial conditions.
ISSN:0023-4753
DOI:10.1002/crat.19710060514
出版商:WILEY‐VCH Verlag
年代:1971
数据来源: WILEY
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| 4. |
A. C. Baynham, A. D. Boardman. Plasma Effects in Semiconductors: Helicon and Alfvén Waves. Taylor&Francis Ltd., London 1971 173 Seiten, 47 Abbildungen, £ 2.50 |
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Kristall und Technik,
Volume 6,
Issue 5,
1971,
Page 69-69
H. Neumann,
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ISSN:0023-4753
DOI:10.1002/crat.19710060515
出版商:WILEY‐VCH Verlag
年代:1971
数据来源: WILEY
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| 5. |
Heinz K. Henisch. Crystal growth in gels. The Pennsylvania State University Press, University Park and London 1970. 107 Seiten, 31 Abbildungen im Text, 1 Farbphoto, $ 6,95 |
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Kristall und Technik,
Volume 6,
Issue 5,
1971,
Page 71-71
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ISSN:0023-4753
DOI:10.1002/crat.19710060516
出版商:WILEY‐VCH Verlag
年代:1971
数据来源: WILEY
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| 6. |
Berichtigung |
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Kristall und Technik,
Volume 6,
Issue 5,
1971,
Page 73-73
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ISSN:0023-4753
DOI:10.1002/crat.19710060517
出版商:WILEY‐VCH Verlag
年代:1971
数据来源: WILEY
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| 7. |
Stability of faceted growth forms from melts and in the presence of impurities |
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Kristall und Technik,
Volume 6,
Issue 5,
1971,
Page 577-591
A. A. Chernov,
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摘要:
AbstractTransition from regular polyhedron to skeleton shape for crystals growing from melts is considered. This transition is due to the lower undercooling in central parts of facets as compared with vertexes. It is the growth rate anisotropy which withstands to that undercooling inhomogeneity.For very strong anisotropy the stability criterion is determined as the crystal size above which the undercooling in the centers of facets approaches zero.For arbitrary anisotropy the stability criterion presents the relationship between crystal size and small distortion of facets.
ISSN:0023-4753
DOI:10.1002/crat.19710060502
出版商:WILEY‐VCH Verlag
年代:1971
数据来源: WILEY
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| 8. |
Zum Mechanismus der Kristallisation von Na2B4O7aus eigener Schmelze |
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Kristall und Technik,
Volume 6,
Issue 5,
1971,
Page 593-600
A. A.,
Chernov,
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摘要:
AbstractIm Rahmen eines Studiums des Kristallisationsverlaufes in glasbildenden Systemen wird die lineare Kristallisationsgeschwindigkeit von α‐Na2B4O7aus eigener Schmelze untersucht und der Temperaturverlauf dieser Größe im experimentell zugänglichen Temperaturgebiet aufgestellt. Es wird gezeigt, daß das Kristallwachstum wie auch der Kristallabbau nach dem sog. normalen Mechanismus verlaufen. Dieses Resultat wird mit anderen Kristallisationsfällen verglichen und diskutiert. Das Natriumtetraborat wird dann als Kristallisationsmodell seiner Struktur und Eigenschaften nach allgemein charakte
ISSN:0023-4753
DOI:10.1002/crat.19710060503
出版商:WILEY‐VCH Verlag
年代:1971
数据来源: WILEY
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| 9. |
Influence of supersaturation on the kinetics of crystallisation of ZnC2O4· 2H2O |
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Kristall und Technik,
Volume 6,
Issue 5,
1971,
Page 601-605
E. Kirkova,
M. Djarova,
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摘要:
AbstractThe kinetics of crystallisation of ZnC2O4· 2 H2O was investigated at 25°C and at different supersaturations. Zinc oxalate was prepared from pure zinc sulphate and oxalic acid solutions. The specific surface energy at the crystal‐solution interface was calculated from the induction period and the Volmer relationship, while the critical nuclei dimension was found by means of the Thomson‐Gibbs equation. With the decrease in supersaturation the size of the nuclei does not increase to infinity, but changes by 1–2 unit cells within a given supersaturatio
ISSN:0023-4753
DOI:10.1002/crat.19710060504
出版商:WILEY‐VCH Verlag
年代:1971
数据来源: WILEY
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| 10. |
Effect of substrate orientation on growth rate and doping level of vapour grown GaAs. Interval (111)A—(100)—(111)B |
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Kristall und Technik,
Volume 6,
Issue 5,
1971,
Page 607-622
L. G. Lavrentyeva,
Yu. G. Kataev,
V. A. Moskovkin,
M. P. Yakubenya,
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摘要:
AbstractThe effect of the substrate orientation and the supersaturation on the growth rate and doping level of vapor grown GaAs is considered. Experimental results are discussed in terms of crystal growth theory developed by BURTON, CABRERA, FRANKand CHERNOV(BCFCh). It is shown that the main predictions of theory are in agreement with the experimental results. At the same time experimental results, on the whole, are more complicated than predicted by simple crystal growth model. It can be concluded that the BCFCh‐theory is applicable for analysing the growth rate and doping level anisotropy for vapor grown crystal
ISSN:0023-4753
DOI:10.1002/crat.19710060505
出版商:WILEY‐VCH Verlag
年代:1971
数据来源: WILEY
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