摘要:

Thermal annealing of a supersaturated solid solution of antimony in silicon results in the formation of partially coherent antimony precipitates. Transmission electron microscopy and microdiffraction studies show the precipitates to be bounded by {112} Si surfaces with the {111} Si and {1¯012} Sb planes coherent across the interface. The role of dislocations in the growth of the precipitates is discussed.

ISSN:0021-8979    

DOI:10.1063/1.331992

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Depth distributions, measured by secondary ion mass spectrometry (SIMS), and carrier profiles, measured by differential capacitance‐voltage (C‐V) profiling, of boron and fluorine implanted as B, F, BF, or BF2ions into random and channeling orientations of crystalline silicon, and into silicon amorphized by silicon ion implantation are reported. Low boron energies of 8 and 10 keV and the corresponding energies of 36 and 45 keV for BF2ions are emphasized because of their use for high resolution device and circuit applications in silicon and silicon‐on‐sapphire. Amorphizing crystalline silicon prior to boron implantation eliminates the significant channeling tails on 8‐ or 10‐keV boron profiles. Fluorine penetrates more deeply into crystalline silicon than boron does. Both boron and fluorine redistribute during annealing at 925 °C/20 min for B, F, BF, or BF2implants, but with quite different characteristics as illustrated, and depend on the implantation fluence (5×1014and 2×1015cm−2reported here). The fluorine redistribution profiles are strongly influenced by the magnitude and distribution of damage that remains after annealing. Fair agreement is shown between boron atom depth distributions measured by SIMS andC‐Velectrical profiles measured for a fluence of 1.5×1012cm−2. DifferentialC‐Vprofiles indicate that the entire ion spectrum from BF3can be implanted and electrically activated (for a fluence of 1.5×1012cm−2), as can a BF2implant. Implantation through a 20‐nm layer of SiO2has no significant effect on the boron depth distribution in crystalline silicon. Pearson IV moments are given for the low energy boron profiles. The use of these profiles for modeling calculations is discussed. Thesupremmodel of an exponential for the channeling tail of boron implants in crystalline silicon is fairly good for fluences greater than about 1015cm−2, but poorer for lower fluences, but the slope and matching to the random portion of the profiles are difficult to predict. In order for modeling calculations to reasonably represent boron profiles, either the silicon substrate should be amorphized prior to boron implantation, or the modeling should be modified to use experimental data measured for the implant and silicon conditions.

ISSN:0021-8979    

DOI:10.1063/1.331993

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The internal friction and modulus changes in pure and hydrogenated nickel are measured after plastic deformation at frequencies of 2 Hz and 30 kHz. The hydrogen dissolution strongly diminishes a Bordoni‐type peak (B peak) but develops a Snoek–Ko¨ster‐type peak (SK peak) at a temperature well above the B peak. The SK peak increases in height and shifts toward higher temperature with increasing hydrogen concentration up to 1600 at. ppm. It has an effective activation enthalpy of 0.50±0.05 eV. An analysis of the concentration dependence of the peak shift suggests that this peak is caused by dislocations dragging pairs of hydrogen atoms, rather than isolated ones, segregated in the vicinity of the dislocations. A simple model is proposed which involves both dislocation pinning and impurity drag with changes in temperature. It explains well the observed correlation between the B peak and the SK peak as well as the conservation of their total relaxation strength with changes in the hydrogen concentration.

ISSN:0021-8979    

DOI:10.1063/1.331994

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Frominsitudiffraction measurements of synchrotron produced x radiation, we have found that AgGaTe2transforms from the tetragonal, chalcopyrite structure to a face‐centered cubic structure at 4.0±0.5 GPa. The resistivity shows a minimum near this pressure, but the material retains its semiconducting nature.

ISSN:0021-8979    

DOI:10.1063/1.331995

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The first‐order phase transformation in NaCN at 288 °K is identified as a martensite transformation accompanied by the formation of mechanical deformation twins of the first kind. Photomicroscopy measurements of the crystal surface morphology and nuclear magnetic resonance measurements of the domain orientation are in agreement with the predictions of the Weschsler, Lieberman, and Read theory of twin formation accompanying a martensite transformation. There are 24 domains; the groupS2leaves a domain invariant and the domain generating group ofFoperations is eitherOorTd. NaCN is identified as belonging to the ferroelastic species m3mF1¯.

ISSN:0021-8979    

DOI:10.1063/1.331996

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The thermal expansion of a ferromagnetic solid solution of (Mn1−xTax)3B4was determined using a high temperature x‐ray powder diffraction technique in the temperature range 300–973 K. From the thermal expansion curve, the values of the exchange striction along three axes were deduced. They were negative along bothaandbaxes, but the thermal expansion of thecaxis was very small and exchange striction was not observed. It was considered that such an anisotropy in the thermal expansion of the present sample was due to the crystallographic structure of Ta3B4. The pressure dependence of the Curie temperature of (Mn0.8Ta0.2)3B4was determined to be 0.77 deg/kbar from electrical resistivity measurements under high pressure. The observed value ofdTc/dpis in good agreement with the value calculated using the molecular theory proposed by Bean and Rodbell.

ISSN:0021-8979    

DOI:10.1063/1.331997

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Various phenomena associated with phosphorus diffusion in silicon are reviewed and prominent models are critiqued. It is shown that these models are either fundamentally unsound, or are inconsistent with observed phenomena. A consistent model is proposed in which two mechanisms are operating simultaneously, namely, the vacancy mechanism for the slower diffusing component, and the interstitialcy mechanism for the faster diffusing component. It is assumed that phosphorus exists in silicon in both the substitutional and the interstitialcy species, and that both are shallow donors. The conversion between the two species is relatively slow, giving rise to the so‐called kinked concentration profile. Diffusion via a partial interstitialcy mechanism leads to a supersaturation of self‐interstitials.

ISSN:0021-8979    

DOI:10.1063/1.331998

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Interdiffusion in Cu–Al thin film bilayers at temperatures between 160 and 300 °C has been studied by a combination of glancing‐incidence x‐ray diffraction, Rutherford backscattering spectroscopy, and transmission electron diffraction and microscopy. A sequential intermetallic compound formation was observed in samples with an excess amount of Cu with &thgr;‐CuAl2forming first, followed by &eegr;2‐CuAl, and &ggr;2‐Cu9Al4. In samples with excess Al, the &thgr;‐CuAl2is the first and the last phase formed. The thickening of these compounds was found to obey a parabolic relationship with time, and especially the thickening of &thgr;‐CuAl2can be described by a prefactor of 7.4 cm2/s and an activation energy of 1.31 eV.

ISSN:0021-8979    

DOI:10.1063/1.331999

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Isolated W islands, 150 A˚ in diameter, have been deposited between Cu and Al thin film bilayers to serve as inert diffusion markers. Marker displacements have been measured consecutively by Rutherford backscattering spectroscopy during the sequential growth of CuAl2, CuAl, and Cu9Al4intermetallic compounds upon annealing in the temperature range 160–250 °C. The intrinsic interdiffusion coefficients of Al and Cu in each of these compounds have been determined by applying an analysis of marker motion in a binary diffusion couple to the measured displacement data. Moreover, the prefactor and activation energy of the individual diffusivities have been calculated as shown below by measuring the marker motion as a function of temperature. For CuAl2,D0Al=0.4 cm2/s,QAl=1.25±0.05 eV,D0Cu=9.5 cm2/s,QCu=1.40±0.05 eV. For CuAl,D0Al=1.5×10−7cm2/s,QAl=0.7±0.05 eV,D0Cu=1×10−2cm2/s,QCu=1.1±0.05 eV. For Cu9Al4,D0Al=1.7×10−3cm2/s,QAl=1.20±0.05 eV,D0Cu=2.4×10−2cm2/s,QCu=1.30±0.05 eV. These values agree quite well to those chemical interdiffusion coefficients published in the literature for bulk samples. A discussion on sequential compound formation has been given on the basis of these measured values.

ISSN:0021-8979    

DOI:10.1063/1.332000

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Aluminum/silicon dioxide/silicon capacitors in which the oxide has been grown thermally under ultra‐dry (≲1 ppm H2O) conditions and subsequently treated by low temperature water diffusion have been characterized electrically and chemically. Avalanche injection of electrons has been observed to produce the complex charging behavior previously observed in similar systems, which includes electron trapping and interface positive charge generation. Secondary ion mass spectrometry depth profiling of these structures has shown that electron injection also results in hydrogen transport. This is the first direct observation of hydrogen redistribution under the influence of an electron current. We demonstrate a linear relationship between injected charge fluence and areal density of hydrogen localized at the SiO2/Si interface. These results indicate that hydrogen release correlates with interface state generation, but not with bulk oxide trapping.

ISSN:0021-8979    

DOI:10.1063/1.332009

出版商:AIP    

年代:1983

数据来源: AIP