摘要:

The observation of optical quenching of photoconductivity in GaN photoconductors at room temperature is reported on. Three prominent quenching bands were found atEv+1.44, 1.58, and 2.20 eV, respectively. These levels are related to three hole traps in GaN materials based on a hole trap model to interpret the quenching mechanism. The responsivity was reduced about 12&percent; with an additional He–Ne laser shining on the photoconductor. ©1997 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.366090

出版商:AIP    

年代:1997

数据来源: AIP

摘要:

High efficiency, low threshold visible AlGaInP/GaInP laser diodes using a buried AlAs native oxide for carrier and optical confinement are described. The lasers incorporate a thin AlAs layer in the upper cladding region, which when laterally wet oxidized, forms a narrow aperture. The lasers exhibited modest performance under continuous wave (cw) operation. Low temperature (400 °C) post-fabrication annealing was shown to dramatically improve the device characteristics. The lasers operate with room temperature cw threshold currents of 20 mA with external differential quantum efficiencies of 27&percent; per facet (0.25 W/A per facet) for an uncoated 625-&mgr;m-long, 3.5-&mgr;m-wide device. ©1997 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.366091

出版商:AIP    

年代:1997

数据来源: AIP