摘要:

The Schottky barrier of Na deposited onto ultrahigh vacuum cleavedp‐type GaP has been determined byinsitucurrent‐voltage measurements. The Schottky barrier height of 1.10 eV for this low work function metal contacts is consistent with a general weak metal dependence for barrier formation on GaP(110).

ISSN:0021-8979    

DOI:10.1063/1.352183

出版商:AIP    

年代:1992

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.352370

出版商:AIP    

年代:1992

数据来源: AIP