摘要:

This work presents a Monte Carlo simulation of the ion distribution and of the damage growth in phosphorous‐implanted silicon. The calculation shows that channeling tails may form at doses well above the threshold for the formation of a continuous amorphous layer.

ISSN:0021-8979    

DOI:10.1063/1.334340

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

The temperature‐dependent stress of boron‐nitride (BN) films deposited by low‐pressure chemical vapor deposition was measured using an optically leveraged laser apparatus. The measurements were used to calculate values ofE/1−&ngr; and &agr; for BN as a function of the NH3/B2H6ratio. Values ofE/1‐&ngr;&bartil;1×1012dynes/cm2and &agr;&bartil;5×10−6 °K−1were obtained independent of the NH3/B2H6ratio. The intrinsic‐stress and the thermal‐stress contributions to the room‐temperature stress were estimated for different substrates and the values were used to rationalize the strong dependence of the room temperature stress on chemical vapor deposition processing variables.

ISSN:0021-8979    

DOI:10.1063/1.334341

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Rietveld analyses of neutron powder diffraction data on Pr2Fe14B and Dy2Fe14B are reported. Both phases form the Nd2Fe14B tetragonal crystal structure (P42/mnm). At 77 and 293 K our analyses indicate that all magnetic moments in each compound are collinear with thecaxis. The rare‐earth moments in Pr2Fe14B are parallel to the Fe moments (ferromagnetic) and are antiparallel in Dy2Fe14B (ferrimagnetic).

ISSN:0021-8979    

DOI:10.1063/1.334342

出版商:AIP    

年代:1985

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.335508

出版商:AIP    

年代:1985

数据来源: AIP