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| 101. |
Silicon photodiode front region collection efficiency models |
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Journal of Applied Physics,
Volume 51,
Issue 7,
1980,
Page 3993-3995
Jon Geist,
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PDF (197KB)
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摘要:
The minority‐carrier transport equations are solved numerically for a realistic model of the front region of a UV‐enhanced silicon photodiode. Surface recombination is shown to be the dominant quantum efficiency reducing mechanism. Auger recombination is shown to be almost negligible for the type of diode under investigation.
ISSN:0021-8979
DOI:10.1063/1.328186
出版商:AIP
年代:1980
数据来源: AIP
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| 102. |
Erratum: Energetics of defect motion which transports polyethylene molecules along their axis |
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Journal of Applied Physics,
Volume 51,
Issue 7,
1980,
Page 3996-3996
D. H. Reneker,
B. M. Fanconi,
J. Mazur,
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PDF (40KB)
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ISSN:0021-8979
DOI:10.1063/1.328407
出版商:AIP
年代:1980
数据来源: AIP
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