摘要:

Amphoterically silicon‐doped GaAs heterostructure lasers were fabricated using solution epitaxial growth of GaAs and GaAlAs in a sliding boat system. LOC lasers and double‐heterostructure lasers were obtained. The emission wavelength was between 9040 and 9250 Å. Threshold current densities were typically 12–4 kA cm−2, with 2.4 kA cm−2as the lowest value observed with a double heterostructure.

ISSN:0021-8979    

DOI:10.1063/1.1661932

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Data are presented indicating a change in threshold for domain formation in MBBA as a function of time maintained under dc dynamic scattering. These changes are correlated with observed changes in dielectric constant.

ISSN:0021-8979    

DOI:10.1063/1.1661933

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

By combining several volume percent of conducting particles in a semicrystalline matrix, a highly temperature‐dependent resistivity is obtained. The resistivity changes by several orders of magnitude in a small temperature interval centered on the crystal melting temperature. Moreover, a typical resistivity changes by a factor of hundreds as the frequency changes from 102to 104Hz. Materials of this type show dielectric constants in excess of 103which vary strongly with temperature and frequency.

ISSN:0021-8979    

DOI:10.1063/1.1661934

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Theoretical estimates or experimental determinations of stress fields associated with semiconductor devices are generally simplified with the aid of two elastic constants, Young's modulusEand Poisson's ratio &ngr;. In this paper, a generalized expression for &ngr; has been derived for arbitrary orientations of cubic semiconductor crystals, and the variation ofE, &ngr;, andE/(1‐&ngr;) for directions within the important {111}, {100}, and {110} planes is examined. The results show that isotropic elasticity theory is exact for all directions within {111} planes and that the composite elastic constantE/(1‐&ngr;) which frequently occurs in problems of practical interest is also invariant for all directions within {100} planes. Numerical values for the various elastic constants are tabulated for GaAs, GaP, Si, and Ge.

ISSN:0021-8979    

DOI:10.1063/1.1661935

出版商:AIP    

年代:1973

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1661938

出版商:AIP    

年代:1973

数据来源: AIP