摘要:

Questions are raised concerning the ac conductance measured by J.‐G. Hwuetal. [J. Appl. Phys.62, 4277 (1987)] and its lack of frequency dependence.

ISSN:0021-8979    

DOI:10.1063/1.341588

出版商:AIP    

年代:1988

数据来源: AIP

摘要:

A novel interface to InSb based on photochemical native oxide (PNOX), which improves conventional ultraviolet (UV) enhanced deposition, is reported. Prior to the deposition of SiO2, an additional stage of growing a native oxide by exposing the semiconductor to N2O and Hg vapors at low pressure under UV illumination is introduced. Composition and electrical properties of the interface are discussed. Compositional analysis was performed by Auger electron spectroscopy. Electrical properties were characterized using metal‐insulator semiconductor (MIS) capacitors and photodiodes implemented with UV enhanced chemical vapor deposition (CVD) oxide/PNOX/InSb. Interface state densities of 2–4×1011cm−2 eV−1are obtained with good uniformity and stability. The hysteresis of the MIS structure with 1000 A˚ photoinduced CVD oxide on PNOX is very small, about 0.32 V for a ±20 V span measured at 77 K.

ISSN:0021-8979    

DOI:10.1063/1.341589

出版商:AIP    

年代:1988

数据来源: AIP

摘要:

A study of the distribution of the debris formed by the XeCl laser ablation of polyimide and polyethylene terephthalate and the KrCl laser ablation of polyimide shows that it is the redeposition of debris rather than impurities which accounts for the cone structures commonly seen in the surface morphology.

ISSN:0021-8979    

DOI:10.1063/1.341590

出版商:AIP    

年代:1988

数据来源: AIP

摘要:

Temperature dependencies of Hall mobility of nondoped and nitrogen‐dopedn‐type &bgr;‐SiC films have been analyzed using a conventional theoretical model. Considering acoustic, polar optical, and piezoelectric lattice scatterings, as well as ionized and neutral impurity scatterings, theoretical calculations well fitted to the experimental results are obtained at 70–1000 K. Contributions of acoustic, polar optical, and piezoelectric scatterings to the whole lattice scattering are 84%, 14%, and 2% at 300 K, respectively. Impurity compensation ratioNA/NDof nondoped films increases from 0.45 to 0.96 with increasing Si/C ratio in the source gases. Nitrogen‐doped films show constant compensation ratios of 0.25–0.30 with various doping amounts. These values are different from the previous results obtained by the analysis of temperature dependencies of carrier concentration.

ISSN:0021-8979    

DOI:10.1063/1.341591

出版商:AIP    

年代:1988

数据来源: AIP

摘要:

Epitaxial CrGe was grown locally on both (111) and (001) Ge by a solid‐phase epitaxy scheme. Both plan‐view and cross‐sectional transmission electron microscopy were applied to determine the orientation relationships between epitaxial CrGe and germanium substrates, and to characterize the microstructural features of epitaxial regions and CrGe/Ge interfaces. The best CrGe epitaxy was obtained in (111) samples annealed first at 250 °C for 1 h followed by heat treatment at 600 °C for 1 h. Epitaxial regions as large as 20 &mgr;m in size were observed. CrGe was the first refractory germanide grown epitaxially on germanium. The quality of epitaxy is also unsurpassed by any metal germanide epitaxy achieved to date. The growth of a number of epitaxial germanides on germanium with regular atomic arrangements at the interfaces may facilitate the basic understanding of metal‐semiconductor interactions as well as enhance the performance of various semiconductor‐based devices.

ISSN:0021-8979    

DOI:10.1063/1.341592

出版商:AIP    

年代:1988

数据来源: AIP