摘要:

Measurements of the dielectric constant in crystals of MgO doped with Li+ions have been carried out after quenching from anneals at 1300 °C in static air. Prior to heat treatment, the crystals showed no discernible dielectric loss, but afterwards, the loss tangent exceeded 0.4. For 10‐min anneals, the dielectric relaxation is very close to a Debye process, and the temperature dependence of the maximum of the loss peak corresponds to an activation energy of 0.724 eV. When plotted in the form of a Cole‐Cole arc, the data indicate that deviation from a Debye relaxation amounts to a distribution of relaxation time no greater than that which can be accounted for with a distribution of activation energies of only 0.007 eV. For longer heating times, overlapping relaxation processes appear. The lack of broadening of the loss peak, and the magnitude of the relaxation time, yield clues as to possible loss mechanisms.

ISSN:0021-8979    

DOI:10.1063/1.331202

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

A relatively simple stress modulation technique, based on optical absorption, for measuring the interband transitions in semiconductor electrodes in electrolytes is described. The modulated stress is applied to the semiconductor by modulating the strain of an attached piezoelectric transducer. Stress modulated photoelectrochemical spectra in the vicinities of the minimum interband gaps of ann‐TiO2single crystal electrode and a thin‐filmn‐CdSe electrodeinsituare presented.

ISSN:0021-8979    

DOI:10.1063/1.331203

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

The homogeneous reaction between F or F2and SiF2, the latter formed by the high‐temperature reaction of solid silicon with SiF4, is accompanied by an intense chemiluminescent ’’flame’’ with the spectrum previously observed during silicon etching by F and F2. This experiment provides direct confirmatory evidence that chemiluminescence from both reactions arises from the homogeneous reaction between SiF2and fluorine atoms or molecules.

ISSN:0021-8979    

DOI:10.1063/1.331204

出版商:AIP    

年代:1982

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.331205

出版商:AIP    

年代:1982

数据来源: AIP