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| 101. |
Single‐crystal growth and characterization of LiGaSe2 |
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Journal of Applied Physics,
Volume 52,
Issue 10,
1981,
Page 6441-6443
K. Kuriyama,
T. Nozaki,
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摘要:
Single crystals of a new ternary lithium chalcogenide LiGaSe2were grown by an improved directional solidification technique. The typical as‐grown crystal has dimensions of about 4 mm cubed and shows a transparent light yellow color. We infer that LiGaSe2crystallizes in the &bgr;‐NaFeO2structure having an orthorhombic unit cell (a= 6.833 A˚,b= 8.227 A˚, andc= 6.541 A˚) by powder x‐ray diffraction. The melting point was determined by differential thermal analysis to be 846 °C. The energy band gap of LiGaSe2at room temperature was determined by optical reflectance measurements to be 3.65 eV.
ISSN:0021-8979
DOI:10.1063/1.328553
出版商:AIP
年代:1981
数据来源: AIP
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| 102. |
Comment on ’’Normal modes of semiconductorp‐njunction devices for material‐parameter determination’’ |
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Journal of Applied Physics,
Volume 52,
Issue 10,
1981,
Page 6444-6446
R. Muralidharan,
S. C. Jain,
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摘要:
During the open circuit voltage decay (OCVD) in a diode with &tgr;B/&tgr;E≫1 (&tgr;Band &tgr;Eare the lifetimes of the minority carriers in the base and emitter, respectively), the quasistatic approximation is found to be valid in the emitter but not in the base. If the band‐gap narrowing &Dgr;Egis significant, &tgr;E,&tgr;B, as well as &Dgr;Egdetermine the OCVD fort<&tgr;B. Fort≫&tgr;B[and exp (qV/kT)≫1] OCVD vstplot is approximately linear with its slope ∼1/&tgr;B, irrespective of the magnitude of &Dgr;Eg.
ISSN:0021-8979
DOI:10.1063/1.328554
出版商:AIP
年代:1981
数据来源: AIP
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