摘要:

Photoluminescence spectra and decay times have been measured in liquid‐phase epitaxial GaAs:Sn as functions of temperature (T= 4.2–300 K) and carrier concentration (n= 6×1016–2×1018cm−3). High‐temperature, deep‐level (DL) spectra are identified with conduction‐band‐to‐deep‐acceptor transitions and are analyzed in terms of a theory which incorporates both coupling to lattice vibrations and the distribution of initial electronic states. Parameters obtained from a configuration‐coordinate model are in reasonable agreement with those derived from lowTand decay time measurements. Shifts in the DL spectra with carrier concentration are attributed to band filling and impurity banding.

ISSN:0021-8979    

DOI:10.1063/1.331001

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Measurements of the voltage dependence of the photocurrent in hydrogenated amorphous siliconp‐i‐nsolar cells are presented along with a simple physical model of the transport. For the conditions of weakly absorbed light, the photocurrent‐voltage curve can be completely specified by the light intensity and electron and hole drift lengths. Furthermore, the carrier with the longer drift length determines the solar cell current‐voltage curve.

ISSN:0021-8979    

DOI:10.1063/1.331002

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

The specific current‐voltage‐temperature dependence of space‐charge‐limited conduction processes in semiconductors and insulators is largely determined by the distribution in energy of traps within the band gap. A linear dependence of current‐density on the square of the applied voltage, may be alternatively interpreted in terms of either a single discrete trapping level, or of an exponential trap distribution. The two types of trapping behavior may be distinguished using measurements of the variation of current with temperature for arangeof different constant voltages.

ISSN:0021-8979    

DOI:10.1063/1.331003

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Field effect studies were made on In‐rich SnTe films using metal‐insulator‐semiconductor (silver‐mica In‐Sn e) structures. It has been observed that when a negative gate field (∼1.5×105V/cm) was applied to the films at 77 K, a permanent decrease in the value of the Hall coefficientRHtakes place, whereas no such effect has been noticed in metal‐insulator‐semiconductor structures on undoped SnTe films.

ISSN:0021-8979    

DOI:10.1063/1.331004

出版商:AIP    

年代:1982

数据来源: AIP