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111. |
Polygonization of directionally solidified high critical current YBa2Cu3O6+x |
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Journal of Applied Physics,
Volume 79,
Issue 11,
1996,
Page 8847-8849
F. Sandiumenge,
N. Vilalta,
X. Obradors,
S. Pin˜ol,
J. Bassas,
Y. Maniette,
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摘要:
The mosaic structure of single domain YBa2Cu3O6+x/Y2BaCuO5(123/211) directionally solidified composites is investigated by x‐ray diffraction and transmission electron microscopy. This mosaic structure results from a polygonization process before the oxygenation step. A topological model is given based on the observed distribution of preferred subgrain boundary planes. This polygonization, characteristic of melt textured 123, is proposed to be an intrinsic critical current density limitation for these materials. ©1996 American Institute of Physics.
ISSN:0021-8979
DOI:10.1063/1.362476
出版商:AIP
年代:1996
数据来源: AIP
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112. |
An experimental investigation on the effective magnetic anisotropy of nanocrystalline Fe89Zr7B4soft magnetic alloys |
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Journal of Applied Physics,
Volume 79,
Issue 11,
1996,
Page 8850-8852
F. Zhou,
K. Y. He,
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摘要:
The effective magnetic anisotropy (Keff) of nanocrystalline Fe89Zr7B4soft magnetic alloys with different bcc Fe grain sizes (D) has been investigated by using the law of approach to saturation. The effective magnetic anisotropy of the alloys is found to be considerably depressed. The values ofKefffor the alloys (from 879 to 1038 J/m3) are very close to those of the nanocrystalline Fe73.5Cu1Nb3Si13.5B9soft magnetic alloys, suggesting that the relatively lower permeability of the alloys is independent of the factor ofKeff. With an increase of grain size,Keffis slightly increased. However, the grain size dependence ofKeffis obviously deviated from theKeff∝D6law, which might be mainly attributed to the residual amorphous phase in the alloys. ©1996 American Institute of Physics.
ISSN:0021-8979
DOI:10.1063/1.362471
出版商:AIP
年代:1996
数据来源: AIP
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113. |
Resonant Raman scattering study of InSb etched by reactive ion beam etching |
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Journal of Applied Physics,
Volume 79,
Issue 11,
1996,
Page 8853-8855
J. R. Sendra,
G. Armelles,
T. Utzmeier,
J. Anguita,
F. Briones,
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摘要:
A Raman study of InSb etched by reactive ion beam etching using a CH4/H2/N2plasma generated by electron cyclotron resonance is presented. The evolution of the LO, 2LO phonon and phonon–plasmon coupled modes has been studied using resonant Raman spectra in different configurations. Results indicate an increase of the carrier density by a factor of about 60 and a decrease of the built‐in potential due to the plasma process. The combination of both evolutions results in a prevalence of the electric field induced scattering upon the defect induced scattering mechanism. ©1996 American Institute of Physics.
ISSN:0021-8979
DOI:10.1063/1.362472
出版商:AIP
年代:1996
数据来源: AIP
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114. |
Plasma deposition of amorphous SiC:H,F alloys from SiF4‐CH4‐H2mixtures under modulated conditions |
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Journal of Applied Physics,
Volume 79,
Issue 11,
1996,
Page 8856-8858
G. Cicala,
P. Capezzuto,
G. Bruno,
L. Schiavulli,
G. Amato,
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PDF (82KB)
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摘要:
Fluorinated and hydrogenated amorphous silicon‐carbon alloys (a‐SiC:H,F) are produced by glow discharge decomposition of SiF4‐CH4‐H2mixture. Small amount of CH4in SiF4‐H2mixture are enough to produce silicon carbon alloys having optical gap ranging between 1.8 and 2.6 eV. Materials, having 1.95 eV band gap and exhibiting optoelectronic properties typical of state of arta‐SiC:H, are deposited under plasma modulation conditions. ©1996 American Institute of Physics.
ISSN:0021-8979
DOI:10.1063/1.362473
出版商:AIP
年代:1996
数据来源: AIP
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