摘要:

This note points out the advantage, in Monte Carlo computation of the differential mobility for semiconductor hot electrons, of calculating in terms of time interval between a perturbing field and the response, rather than for a given frequency of the perturbing field (time domain rather than frequency domain) and proposes a procedure for this. The extension to a hot‐electron system not in a steady state is discussed.

ISSN:0021-8979    

DOI:10.1063/1.332399

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

At high injections, the effect of recombinations in the emitter becomes important in interpreting reverse recovery experiments. If this effect is taken into account, the observed values oftsyield considerably larger values of base lifetime than those obtained by using the simple Kingston’s theory.

ISSN:0021-8979    

DOI:10.1063/1.332400

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Resonance cones, a phenomenon which has been observed in electrostatic plasma waves, should also exist in magnetostatic waves propagating in ferrites. Resonance cones, the spatial characteristics of the hyperbolic partial differential describing both plasma and ferrite waves, are aligned along the group velocity trajectory and are equivalent to the superposition of an infinity of normal modes. The existence of resonance cones has been overlooked in standard normal mode analyses of ferrite waves, where typically, only one mode is assumed to exist at a time.

ISSN:0021-8979    

DOI:10.1063/1.332401

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The refractive index of the quaternary InGaAsP lattice matched to InP at energies below the fundamental absorption is presented. The theoretical result for refractive indexnis obtained from a quantum mechanical calculation of the dielectric constant of a compound semiconductor. It is given in terms of basic material parameters only, with no adjustable constants. Comparison of theory with experimental data is also discussed.

ISSN:0021-8979    

DOI:10.1063/1.332402

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

CO2laser‐induced melting of heavily doped silicon (>1018cm−3) was studied using both nanosecond and picosecond laser pulses. Evidence for melting is presented and the duration of the melting was measured at intensities below the damage threshold. Dense plasma formation was observed before melting occurred. The melt durations were considerably longer than reported previously for visible laser pulses of comparable durations, indicating a very deep (≳1 &mgr;m) molten layer had been achieved.

ISSN:0021-8979    

DOI:10.1063/1.332403

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Argon laser induced plating of copper spots and lines from copper sulfate solutions on glass and phenolic resin paper has been investigated. The substrates had to be precoated with an evaporated copper film. The highest plating rates have been obtained with a small film thickness of 25 nm. Spots with a thickness up to 30 &mgr;m were plated.

ISSN:0021-8979    

DOI:10.1063/1.332404

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Temperature gradient zone melting can be utilized to force metallic migration through a semiconducting wafer. The rate of metallic migration is dependent on the temperature profile within the wafer. Kellett’s model is applied to determine the temperature gradient within a radiantly heated wafer. This model includes the absorption and reradiation of energy along with strictly conductive heat transfer. Computer calculations based on the model show that the temperature gradient is constant inside the wafer and that it tends to zero near the wafer surfaces. This indicates that heat transfer is primarily by conduction inside the wafer and by radiation near the surface.

ISSN:0021-8979    

DOI:10.1063/1.332405

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Junctions between polypyrrole, a conducting polymer formed by electrooxidation, andn‐type semiconductors have been studied. Cadmium sulphide and titanium dioxide were chosen as substrates as a complement to earlier studies on silicon. The junctions behave as Schottky barriers on these semiconductors. The series resistance of the polypyrrole film is large and was taken into account in the evaluation of the data. The barrier heights of the junctions are compared with those found with ordinary metals. It is deduced that the work function of polypyrrole must be close to 5 eV.

ISSN:0021-8979    

DOI:10.1063/1.332406

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The hemispherical spectral reflectance and the hemispherical total emittance were measured for copper oxide films produced by anodic oxidation. The anodic copper oxide films are shown to have desirable selective surface properties for use as solar absorbers.

ISSN:0021-8979    

DOI:10.1063/1.332407

出版商:AIP    

年代:1983

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.332838

出版商:AIP    

年代:1983

数据来源: AIP