摘要:

The temperature dependence ofI‐Vcurves of thin‐film polycrystalline CdS/Cu2S heterojunctions was investigated as a function of heat treatment applied to them. Prior to any heat treatment, the space charge in the CdS is narrow enough so that electrons can tunnel from the bottom of its conduction band and the tunneling current is temperature independent. Considerable Ohmic shunting is caused by thin layers of Cu2S which had formed along the grain boundaries. After heat treatment, the space charge in the CdS widened due to diffusion of Cu from the Cu2S, so that electrons in CdS now require an activation energy to tunnel, and this results in a temperature‐dependent tunneling current. Furthermore, the thin layers of Cu2S disappeared from the grain boundaries, thus eliminating the shunting paths which had existed prior to the heat treatment.

ISSN:0021-8979    

DOI:10.1063/1.326061

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

By considering the finite distance of the semiconductor space‐charge center away from the Si‐SiO2interface, a modified expression of the flat‐band voltage (VFB) due to the surface charge density (Qss) is derived. For the accumulation and strong inversion cases, the conventional expressionQss/Co, is valid, however, under the depletion condition the modified expression will be used. TheVFBis found to be nonlinearly related toQss, and the expression may be deduced to the conventional form only in the limit that theQssis low, the semiconductor is heavily doped, and the oxide thickness is large.

ISSN:0021-8979    

DOI:10.1063/1.326062

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

The specific heats of Y2(Co1−xAlx)17alloys were measured in the temperature range 1.8–19.5 K forx=0, 0.08, and 0.12. The data below 11 K are well described byC=&ggr;T+&bgr;T3. Values of &ggr; and &bgr; for the three samples were obtained. No evidence for aT3/2term existed. This is not surprising due to the high Curie temperatures. The increase in the value of &ggr; from alloying is significantly higher than that calculated by assuming a rigid‐band model ignoring volume‐change effects.

ISSN:0021-8979    

DOI:10.1063/1.326063

出版商:AIP    

年代:1979

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.326065

出版商:AIP    

年代:1979

数据来源: AIP