摘要:

Shock reverberation experiments were performed on electrically biased specimens of the slim‐loop‐ferroelectric ceramic (Pb0.715Ba0.285)0.991(Zr0.707Ti0.293)0.981Bi0.019O3, and a simple model was fitted to the observed electrical response. It was found that the material could be described as a linear reversible dielectric and that the reciprocal of the permittivity is linearly related to the shock stress.

ISSN:0021-8979    

DOI:10.1063/1.325354

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

The dielectric behavior along the ferroelectriccaxis of melt‐grown single crystals of Sr0.5Ba0.5Nb2O6has been studied under weak fields in the thermally depoled, electrically depoled, and electrically poled single‐domain condition. It is shown that the thermally depoled permittivity is high and strongly disperisve, with a marked ’’aging’’ which preferentially removes the slower relaxing components. The single‐domain permittivity is much lower, very stable, and nondispersive up to piezoelectric resonance and with low tangent &dgr;. The electrically depoled state is of even lower permittivity, and the difference from the single‐domain value is satisfactorily accounted for by clamping of the piezoelectric response. Dielectric data suggest an unusually high density of 180° walls in the thermally depoled condition, and it has not been possible to delineate the domain walls by any of the conventional methods.

ISSN:0021-8979    

DOI:10.1063/1.325321

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

The operational range of the glass‐sealed negative‐electron‐affinity GaAs photocathode has been extended to 3.0 eV by increasing the Al concentration of the GaAlAs passivation layer and decreasing its thickness to approximately 0.3 &mgr;m.

ISSN:0021-8979    

DOI:10.1063/1.325322

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

This paper corrects and clarifies a previously reported dependence of current‐transfer time on loop and junction parameters for Josephson‐junction memory cells.

ISSN:0021-8979    

DOI:10.1063/1.325323

出版商:AIP    

年代:1978

数据来源: AIP