Journal of Applied Physics


ISSN: 0021-8979        年代:1963
当前卷期:Volume 34  issue 4     [ 查看所有卷期 ]

年代:1963
 
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21. Gamma‐Ray Induced Conductivity in Polyethylene and Teflon under Radiation at High Dose Rate
  Journal of Applied Physics,   Volume  34,   Issue  4,   1963,   Page  804-809

Kichinosuke Yahagi,   Akibumi Danno,  

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22. One‐Carrier Space‐Charge‐Limited Current in Solids
  Journal of Applied Physics,   Volume  34,   Issue  4,   1963,   Page  809-812

J. Lindmayer,   J. Reynolds,   C. Wrigley,  

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23. Absorption Spectrum of Germanium and Zinc‐Blende‐Type Materials at Energies Higher than the Fundamental Absorption Edge
  Journal of Applied Physics,   Volume  34,   Issue  4,   1963,   Page  813-818

Manuel Cardona,   Gu¨nther Harbeke,  

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24. Interrelationship of Substrate Temperature and Angle of Incidence Effects upon Anisotropy Variations in Evaporated Nickel‐Iron Thin Films
  Journal of Applied Physics,   Volume  34,   Issue  4,   1963,   Page  818-822

Albert J. Hardwick,  

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25. New Technique for Identifying Particles Observed by a Scintillation Counter
  Journal of Applied Physics,   Volume  34,   Issue  4,   1963,   Page  823-826

W. Gersch,  

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26. Ion Bombardment of Silicon
  Journal of Applied Physics,   Volume  34,   Issue  4,   1963,   Page  827-830

W. Primak,   Y. Dayal,   E. Edwards,  

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27. Resonances of the Fabry‐Perot Laser
  Journal of Applied Physics,   Volume  34,   Issue  4,   1963,   Page  831-843

S. R. Barone,  

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28. Hugoniot Equation of State of Pyrolytic Graphite to 300 kbars
  Journal of Applied Physics,   Volume  34,   Issue  4,   1963,   Page  844-851

D. G. Doran,  

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29. Theory of the Phase Transition in a Cylindrical Superconductor
  Journal of Applied Physics,   Volume  34,   Issue  4,   1963,   Page  851-854

James C. Swihart,  

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30. Thermally Activated Dislocation Kink Motion in Silicon
  Journal of Applied Physics,   Volume  34,   Issue  4,   1963,   Page  855-863

P. D. Southgate,   A. E. Attard,  

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