摘要:

Latent scratches, surface effects, and swirl on silicon wafers can be nondestructively detected by the scanned surface photoresponse technique with results that are similar to those obtained with the usual destructive method of oxidation and preferential etching. In addition, scanned surface photoresponse can provide information on the depth of the damage related to latent scratches and surface effects by noting the effect of bias on the signals observed. The nondestructive nature of the measurement allows one to study phenomena which are not normally accessible such as the change in swirl patterns on a silicon wafer with heat treatment.

ISSN:0021-8979    

DOI:10.1063/1.328229

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

A double‐layer encapsulant of phosphorous glass (PSG)/Si3N4is shown to be useful for postimplantation annealing of sulfur‐implanted InP up to 900 °C without surface deterioration. Under high‐dose implantation and high‐temperature annealing conditions, however, a highly conductive layer is formed near the surface of the InP. A highly compensated orpregion is also produced in the deeper part of the implanted layer. The existence of both thermally‐induced and damage‐induced conductivity must be taken into account to estimate the electrical activity of implanted species from sheet carrier concentration. An estimated real electrical activity of sulfur implanted into InP at room temperature has been established by subtracting damage‐induced carrier concentration obtained from argon implantation data. A maximum electrical activity of 68% was obtained on a sample implanted to a dose of 1×1014S+/cm2and annealed at 900 °C for 20 min.

ISSN:0021-8979    

DOI:10.1063/1.328230

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

The damage profile in P+‐ion‐implanted Si is investigated by ellipsometry. Ellipsometric data are analyzed based on a three‐layer model, i.e., SiO2surface layer–implantation‐induced amorphous Si (a‐Si) layer–crystal Si (c‐Si) substrate. Thea‐Si layer thickness is estimated for three implantation energies, 100, 50, and 30 keV at a fixed dose of 5×1015cm−2. It is shown that a consistent interpretation of the data is possible taking into account the finite‐width transition region betweena‐Si andc‐Si. Assuming the transition layer to be random mixtures ofa‐Si andc‐Si particles, the optical constant distribution in the transition layer is calculated using the effective medium theory for small particle composites. This model is used to estimate transition layer width.

ISSN:0021-8979    

DOI:10.1063/1.328231

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

Electrical measurements are combined with the technique of secondary‐ion mass spectrometry (SIMS) in order to experimentally analyze and correlate the diffusion and activation of ion‐implanted selenium in GaAs. A theory is presented based on the assumption of four chemically different species of selenium: (1) substitutional selenium, (2) interstitial selenium, (3) selenium complexed with a gallium vacancy, and (4) precipitated selenium. It is proposed that the interaction between these four species dictates the resulting redistribution and electrical activation of ion‐implanted layers. The factors governing these interactions are investigated, and it is speculated that only substitutional selenium is a shallow donor. In addition, it is speculated that the species responsible for redistribution of impurity profiles is the selenium‐gallium vacancy complex. Precipitates and interstitial selenium appear to neither diffuse nor act like donors in GaAs. A model is developed which formalizes these observations in a set of five coupled differential equations. By employing a minimum number of simplifying assumptions, we are able to extract quantitative predictions from this model which accurately describe not only our experimental results but those of other workers.

ISSN:0021-8979    

DOI:10.1063/1.328232

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

The furnace annealing characteristics of supersaturated solutions produced by P+implantation (50 keV, 8×1015cm−2) andQ‐switched pulse by ruby laser annealing (0.3–1.5 J/cm2) are investigated. Observed phenomena are classified into two regions. In the region of laser energy ?0.8 J/cm2, the concentrations of supersaturated solutions decrease monotonically to, and remain at thermal equilibrium values during furnace annealing. In the region of laser energy <0.8 J/CM2, the concentrations decrease at first to below the thermal equilibrium values with furnace annealing. However, with continued furnace annealing, the solution concentrations increase and approach the equilibrium value. These results are discussed in relation to the crystal quality after laser annealing and formation of dislocation loops durin subsequent furnace annealing.

ISSN:0021-8979    

DOI:10.1063/1.328233

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

Elastic interaction between extended screw dislocations and tetragonal defects of the ⟨111⟩ type was studied by computing the energy‐distance and the force‐distance profiles for several metals using anistropic elasticity theory. The isotropic values of interaction energy and force as the limiting cases of the anistropic values were also obtained. It is shown that both the width of the dislocation and the anisotropy of the crystal significantly affect the energy‐distance and the force‐distance profiles. From the results obtained, the maximum interaction energy and the hardening coefficients for defect‐dislocation interaction were also calculated. These values are compared with experimentally observed hardening in metals.

ISSN:0021-8979    

DOI:10.1063/1.328234

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

Isochronal and isothermal annealing experiments on defects produced by 1‐MeV electron irradiation at room temperature have been performed onn‐type GaAs (vapor phase epitaxy layers). In addition to the previously reported irradiation‐induced defects E2 to E5, three new traps have been observed (P1 to P3) and their thermal behavior has been studied together with the thermal behavior of the traps E2–E5. The trap E2 is shown to exhibit an annealing kinetics which can be decomposed into the sum of two first‐order kinetics, the first one having the same annealing rate as the annealing kinetics of the traps E3 and E5. These observations lead to an interpretation of the annealing mechanism: annihilation of vacancy‐interstitial pairs or vacancy‐antisite defect pairs, and E2 is tentatively identified as a vacancy.

ISSN:0021-8979    

DOI:10.1063/1.328235

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

For binary and ternary alloys of Fe, Ni, and Cr covered with oxygen and for solid oxides of these elements, the emission yield of monoatomic ions, Fe+, Ni+, and Cr+, are linear functions of the atomic concentrationsCFe,CNi, andCCr. This empirical law suggest that the emission ofM+ions obeys a binary process, involving dynamic electronic exchanges between theMsputtered atoms and their neighbors during inelastic collisions. The determined formula for the interrelationship between theM+intensities and the atomic concentrations is applied to the quantitative analysis of oxide films developed at high temperature on a refractory alloy.

ISSN:0021-8979    

DOI:10.1063/1.328273

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

The acoustic loss peak near 50 K in 5‐MHz 5th overtone AT‐cut synthetic quartz resonators has been used to determine the behavior of the Al‐Na+center under irradiation. The center was found to be stable for irradiations carried out at temperatures below 200 K. Above 200 K the Na+was found to be mobile in the radiation field and was replaced by a hydrogen to form the Al‐OH−center. The decrease in the height of the sodium acoustic loss peak following irradiation at temperatures between 200 and 250 K correlates strongly with the growth of the Al‐OH−and (Ale+)0centers over the same temperature range. Electrodiffusion has been carried out directly on plano‐convex AT‐cut resonator blanks. Using the technique Na has been swept into, as well as removed from AT‐cut resonators. Direct sweeping of AT‐cut resonator blanks should reduce the number of steps needed in the fabrication of radiation‐hardened crystals.

ISSN:0021-8979    

DOI:10.1063/1.328274

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

Methods designed for the simultaneous measurement of energy deposition and impulses allowed the study of the equation of state of a refractory material at energy levels exceeding 2000 cal/g. The principle involved consists of comparing the impulse delivered by the material whose thermodynamic behavior is to be determined with that delivered by a material with a known equation of state. The material investigated here is graphite 2239, with specific gravity 1.78. Reference materials are aluminum and sulfur. The experiments were conducted on the Sidonix accelerator, whose electrical characteristics are 1 MV, 0.8 MA, 80 ns.

ISSN:0021-8979    

DOI:10.1063/1.328290

出版商:AIP    

年代:1980

数据来源: AIP