摘要:

Fluorine distribution profiles for silicon implanted with BF+2have been measured by SIMS as a function of anneal temperature and time. Anomalous migration of fluorine is observed in samples having amorphized layers after implantation. Outdiffusion of fluorine occurs during recrystallization of the amorphous layer, and fluorine collects in regions of residual damage during annealing. This gettering of fluorine by defects illustrates the residual damage below the amorphized layer in samples implanted at room temperature is more difficult to anneal out than that in samples implanted at lower temperture (∼−110 °C).

ISSN:0021-8979    

DOI:10.1063/1.325689

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

The concentration profiles of ion‐implanted boron, phosphorus, and arsenic, and recoil‐implanted nitrogen atoms after ion implantation through Si3N4films on Si have been measured using secondary ion mass spectrometry. The concentration profiles of the implanted ions in Si after ion implantation through Si3N4films were found to agree with those implanted into bare Si within experimental errors, with the exception of a shifting of the concentration peak position. The concentration profiles of recoil‐implanted nitrogen in Si are generally composed of high‐concentration regions with steeply decaying distributions near the silicon surface and the exponential tails whose slopes are independent of ion mass, energy, dose, and film thickness. The concentration level of recoil‐implanted nitrogen and maximum penetration range relative to the implanted ion range depend strongly on ion mass, film thickness, and ion energy. It was demonstrated that the concentration profiles for recoiled nitrogen in Si calculated using the Thomas‐Fermi interaction potential agree better with the measured profiles than those calculated using 1/r2potential, such as presented in the theory by Molineetal.

ISSN:0021-8979    

DOI:10.1063/1.325690

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

In a complete uniform solid solution of a binary alloy, a theoretical method for constructing a very quantitative calibration line for an AES experiment has been developed. In the method, the following are considered: (i) attenuation of a primary beam, (ii) the effects of backscattered electrons and forwardscattered electrons both from solute and base metals, and (iii) true escape lengths of any electrons. Results of calculations are applied for Ag‐Au, Mo‐W, and Be‐Cu systems.

ISSN:0021-8979    

DOI:10.1063/1.325700

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

The 488.0‐ and 476.5‐nm Ar laser lines have been used to obtain Raman spectra near resonance with the ’’blue’’ and ’’violet’’ excitons in Cu2O implanted with helium, sodium, or cadmium ions. The dose dependence of the Raman spectra was obtained for Cd doses ranging from 1.5×1011to 1.5×1015ions/cm2and was then used for monitoring the repair of implantation‐produced damage during anneal treatments. All samples showed a strong anneal stage near 270°C, well below the melting temperature of 1050°C, during which at least 99% of the implantation‐produced damage was removed. The Na‐implanted sample showed a prominent extrinsic luminescence band near 483 nm after annealing. This first study of annealing in ion‐implanted Cu2O demonstrates that resonance Raman scattering is a particularly sensitive probe of damage in semiconductors. The technique exploits the high damage sensitivity of the exciton states with the detailed information on short‐range order displayed in the damage dependence of the phonon Raman spectra.

ISSN:0021-8979    

DOI:10.1063/1.325701

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

The formation and evolution of AlSb precipitates in Sb‐implanted Al has been investigated as a function of temperature, flux, and fluence. Implant temperatures of 23–300 °C, fluxes of 6×1011to 1.3×1013Sb cm−2 sec−1, and fluences of 5×1015to 2×1017Sb cm−2were investigated, and transmission electron microscopy was used to detect the precipitates and to determine their size distributions. The AlSb precipitate mean size becomes larger and the number density decreases with increasing Sb implantation temperature, with increasing fluence, and with decreasing flux. The temperature and flux dependences of the evolution are large for 5×1015Sb cm−2added to initially pure Al, and are much weaker at higher fluences where 1.5×1015Sb cm−2has been added to a preexisting precipitate distribution. This indicates that flux and temperature affect the size distribution most strongly during nucleation and/or early growth. Ion damage has been demonstrated to be a significant factor in the precipitate evolution through Ar and Al bombardment of preexisting precipitates. At 300 °C self‐ion bombardment leads to ripening, whereas the precipitate size distribution is stable in the absence of implantation. At room temperature, Ar irradiation causes the AlSb diffraction pattern to disappear at ∼1 displacement per atom (dpa) independent of precipitate size, suggesting that here destruction of precipitates occurs due to disordering of the AlSb lattice. The results are discussed in terms of thermal and irradiation‐induced processes.

ISSN:0021-8979    

DOI:10.1063/1.325702

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

The electrical activation mechanism of phosphorus ions implanted into a silicon substrate is studied during low‐temperature (?550 °C) annealing. Apparently anomalous behavior where the electrically active fraction versus dose curve shows a peak in a limited dose range is analyzed by measuring the distribution profiles of damage and carrier concentration. Carrier generation was found to be strongly influenced by the extent of damage in the layer. Phosphorus atoms in layers with less than 20% damage were not electrically activated. However, in layers with more than 20% damage, electrical activation abruptly increased with the change of damage. This correlation existed at each depth in the substrate for all samples with various doses. The anomalous dose dependence of the electrically active fraction was recognized to be an integral result of the phenomenon. Analysis of the damage formation showed that overlapping of amorphous clusters produced in each ion trajectory is essential for the electrical activation of implanted impurities. This is related to the carrier compensation center which might be formed after recovery of the amorhpous clusters.

ISSN:0021-8979    

DOI:10.1063/1.325703

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

The catastrophe theory is applied to the analysis of crack propagation. The important parameters and variables of the problem are determined, and a unified picture of the phenomenon is obtained. This model is qualitatively shown to agree with experimental results.

ISSN:0021-8979    

DOI:10.1063/1.325704

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

A technique is described for calibrating the effect of resistive hysteresis on the dynamic piezoresistive coefficient in Manganin stress gauges.

ISSN:0021-8979    

DOI:10.1063/1.325705

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Equations describing the velocity, temperature, and vorticity distributions in the melt of the melt extraction process are derived. It is shown that the melt extraction process can only produce ribbon with a thickness greater than that of the viscous shear layer in the melt. From the minimum quench rate required to produce amorphous metal, a maximum amorphous ribbon thickness and a minimum roller velocity are found. A maximum roller velocity is determined from a balance of opposing centrifugal forces and melt pressure and adhesion forces exerted on the ribbon.

ISSN:0021-8979    

DOI:10.1063/1.325706

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

The wavelengths and directions of dimensional variations in metal ribbons quenched by Newtonian cooling from the melt are estimated for the melt‐spinning and the melt‐extraction processes. The main sources of dimensional variation are the vibration and distortion of the melt puddle from which the ribbon is solidified and the variation of the Newtonian coefficient of cooling along the ribbon‐roller interface. Puddle vibration and distortion can be controlled by using the melt‐extraction process or a melt‐constrained melt‐spinning process. Variation of the Newtonian coefficient of cooling along the ribbon‐roller interface can be diminished by operating under vacuum or in a low‐atomic‐number rare‐gas atmosphere and by using a smooth roller that is cleaned during each roller revolution.

ISSN:0021-8979    

DOI:10.1063/1.325708

出版商:AIP    

年代:1979

数据来源: AIP