摘要:

From measurements of change in conductivity with electron irradiation of thinn‐type germanium samples at 79°K, a threshold energy for the formation of stable acceptor centers has been determined. It is found to be 355±5 kev, corresponding to 15.1 ev for the lightest mass germanium isotope at rest. Taking into account the contribution of lattice vibrations to the displacement energy the threshold is ∼16 ev. An orientation dependence has been found in the rate of formation of the centers in agreement with the predictions of Kohn. In order of decreasing rate of center formation the three orientations examined are (111), (110), (100). There isnocorresponding orientation dependence in the threshold energy itself. The energy dependence of the rate of acceptor formation suggests the defects are not the closest vacancy‐interstitial pairs. A positive temperature dependence of the rate of acceptor formation has been found. This effect is largest at lowest electron energies. It is not explicable by lattice vibrations, although they can contribute to the effect between 79°K and room temperature. The apparent threshold changes by ∼100 kev between 21 and 263°K.

ISSN:0021-8979    

DOI:10.1063/1.1735309

出版商:AIP    

年代:1959

数据来源: AIP

摘要:

The simple model for atomic displacements by electrons of Seitz and Koehler is used to calculate the total number of displaced atoms in germanium and silicon due to electrons and gamma rays of energies up to 7 Mev. The calculations are compared to reported experiments in the literature. Electron damage at energies below 1 Mev requires the assumption of threshold energies less than 30 ev, while the higher energy electron damage data are fairly well explained by a 30‐ev threshold. The measured gamma‐ray cross sections for atomic displacements are an order of magnitude smaller than the calculated cross sections, even for a 30‐ev threshold both for silicon and germanium.

ISSN:0021-8979    

DOI:10.1063/1.1735310

出版商:AIP    

年代:1959

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1735314

出版商:AIP    

年代:1959

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1735319

出版商:AIP    

年代:1959

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1735323

出版商:AIP    

年代:1959

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1735324

出版商:AIP    

年代:1959

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1735329

出版商:AIP    

年代:1959

数据来源: AIP