31. |
Etch Pits and Dislocations in SnO2Crystals |
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Journal of Applied Physics,
Volume 36,
Issue 3,
1965,
Page 844-849
F. P. Koffyberg,
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摘要:
Dislocation etchants have been developed for SnO2single crystals grown from the vapor phase. The correlation between etch pits and dislocations was established by an analysis of the pit patterns formed on matched cleavage surfaces, and on as‐grown faces after plastic deformation and annealing. The slip systems were found to be {110}/〈001〉 and {101}/〈101¯〉, and arguments for the existence of partial dislocations on the latter slip plane are given. The shapes of pits produced by boiling HI on {110} faces are analyzed for a correlation with the following dislocation characteristics: angle of incidence of the dislocation line, the presence of segregated impurities on the dislocation, and the direction of the Burgers vector. A simple technique for decorating dislocations is described. Finally, it is shown that dislocations in as‐grown crystals arise from two processes, both occurring during cooling after growth: (1) the differential thermal expansion of the growth substrate and adhering crystals, and (2) the diffusion of oxygen into the material resulting in a stoichiometry gradient.
ISSN:0021-8979
DOI:10.1063/1.1714230
出版商:AIP
年代:1965
数据来源: AIP
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32. |
Energy Distribution of Energetic Atoms in an Irradiated Medium |
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Journal of Applied Physics,
Volume 36,
Issue 3,
1965,
Page 850-851
M. D. Kostin,
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摘要:
A set of coupled linear integral equations for the energy distributions of rapidly moving atoms in an irradiated medium composed of many species is investigated. It is assumed that only binary collisions occur in which an energetic atom interacts with a thermal atom. Solutions are obtained for the case of two species where scattering is isotropic in the center of mass system and all collision cross sections have the same energy dependence. When the massm1of species 1 is much less thanm2the collision densities have the formf(E)=aE−2+bE−2+4(c1+c2)m1/m2, wherec1andc2are related to the collision cross sections. Whenm1=m2, thenf(E)=aE−2+bE−1/(1+c1)−1/(1+c2). Similar solutions are found for intermediate mass ratios.
ISSN:0021-8979
DOI:10.1063/1.1714231
出版商:AIP
年代:1965
数据来源: AIP
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33. |
Internal Friction under Hydrostatic Pressure |
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Journal of Applied Physics,
Volume 36,
Issue 3,
1965,
Page 852-854
M. H. Miles,
K. L. DeVries,
P. Gibbs,
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摘要:
Internal friction measurements of zone‐refined Al were obtained up to pressures of 5 kbar. The log of the background damping was found to increase linearly with pressure, with slopes of about 1.5×10−4kbar−1and 47.7×10−4kbar−1for CS2and kerosene pressure media, respectively. A reversible, intrinsic, pressure dependence of the amplitude‐dependent part of the decrement &Dgr; was found for Al of the approximate form ∂(ln&Dgr;)/∂p=M+N/&egr;0, whereM= −4.5×10−3kbar−1,N= −4.2×10−8kbar−1, and &egr;0is the strain amplitude. Theoretical expressions for the value of the ``misfit parameter'' &egr;′ and its pressure derivative are derived from the Granato‐Lu¨cke theory in terms ofM, N, and elastic constant data. It is suggested that the Granato‐Lu¨cke theory does not apply to zone‐refined Al at these strain amplitudes.
ISSN:0021-8979
DOI:10.1063/1.1714232
出版商:AIP
年代:1965
数据来源: AIP
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34. |
Effects on 40‐MeV Alpha Particles on Dislocations in Sodium Chloride |
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Journal of Applied Physics,
Volume 36,
Issue 3,
1965,
Page 855-856
Michael Hacskaylo,
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ISSN:0021-8979
DOI:10.1063/1.1714233
出版商:AIP
年代:1965
数据来源: AIP
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35. |
Cesium Partial Pressure Over a Cs3Sb Photocathode |
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Journal of Applied Physics,
Volume 36,
Issue 3,
1965,
Page 856-857
Jay Burns,
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ISSN:0021-8979
DOI:10.1063/1.1714234
出版商:AIP
年代:1965
数据来源: AIP
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36. |
Quenched‐In Point Defects in Beta‐Phase Au&sngbnd;Zn |
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Journal of Applied Physics,
Volume 36,
Issue 3,
1965,
Page 857-858
K. Mukherjee,
D. S. Lieberman,
T. A. Read,
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ISSN:0021-8979
DOI:10.1063/1.1714235
出版商:AIP
年代:1965
数据来源: AIP
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37. |
Self‐Induced Oscillations in the Stimulated Light Emission from GaAs Injection Lasers |
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Journal of Applied Physics,
Volume 36,
Issue 3,
1965,
Page 859-859
R. S. Levitt,
M. H. Pilkuhn,
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ISSN:0021-8979
DOI:10.1063/1.1714236
出版商:AIP
年代:1965
数据来源: AIP
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38. |
Line Positions and Quadrupole Coupling in Mo¨ssbauer Iron Experiments |
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Journal of Applied Physics,
Volume 36,
Issue 3,
1965,
Page 860-861
P. H. Remy,
H. Pollak,
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ISSN:0021-8979
DOI:10.1063/1.1714238
出版商:AIP
年代:1965
数据来源: AIP
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39. |
Indicator Dilution Considered as the Delayed Pulse Response of an Overdamped Resonant Circuit |
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Journal of Applied Physics,
Volume 36,
Issue 3,
1965,
Page 861-863
W. A. Conrad,
R. W. Brancato,
C. A. Pallini,
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ISSN:0021-8979
DOI:10.1063/1.1714239
出版商:AIP
年代:1965
数据来源: AIP
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40. |
Effect of Scattering on Charge Transfer Efficiency Measurements: Reply to Peterson's Letter |
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Journal of Applied Physics,
Volume 36,
Issue 3,
1965,
Page 863-864
P. Mahadevan,
R. Marriott,
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ISSN:0021-8979
DOI:10.1063/1.1714240
出版商:AIP
年代:1965
数据来源: AIP
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