摘要:

It seems probable that two types of 60° edge dislocation exist in CdTe because of the geometrical polarity. In fact, such types of dislocations can be made visible as different etch pit figures with two kinds of etches. Two types of bendings were applied for the introduction of either excess‐Cd or excess‐Te dislocations. On each bending two types of dislocations were simultaneously brought about with a minimum in density near the neutral plane. However, annealing at high temperature resulted in a uniform distribution of dislocations and a polygonization of the crystal. Furthermore, it was found that dislocations of the correct sign, necessary to produce the required configuration of bending, were predominantly conserved while unexpected dislocations were thermally annihilated during the polygonization process.

ISSN:0021-8979    

DOI:10.1063/1.1702621

出版商:AIP    

年代:1963

数据来源: AIP

摘要:

Light optical and transmission electron microscopy on epitaxially deposited silicon crystals in [100], [110], and [111] orientation show that growth stacking faults are formed regardless of orientation. These faults occur in bundles of usually tetrahedral figures with the apices at the substrate‐film interface, and some faults may exist as closed intrinsic‐extrinsic pairs. The results suggest that faults are nucleated by oxygen contamination. Some evidence for impurity segregation to faults is also presented.

ISSN:0021-8979    

DOI:10.1063/1.1702622

出版商:AIP    

年代:1963

数据来源: AIP

摘要:

The spectral photoresponse of Si and GaAs photodiodes near the band edge has been measured with reverse bias up to nearly 100 V at room temperature. The measurement shows that the reverse voltage V raises the photoresponse &Dgr;I, especially in the long‐wavelength region, and hence also shifts the spectrum toward longer wavelength. At a fixed wavelength, &Dgr;Iis proportional toVn, where,ndecreases as the photon energy increases. For the step‐type Si junction,nranges from ⅕ to ½ as the photon energy changes from 1.6 (&agr;−1=10 &mgr;) to 1.15 eV (&agr;−1=1000 &mgr;); this voltage dependence may mainly result from the widening of the junction depletion‐layer by the reverse bias. For GaAs photodiodes, the exponentnchanges from ⅙ to 1.3 as the photon energy varies from 1.44 (&agr;−1=1.6 &mgr;) to 1.36 eV (&agr;−1=1000 &mgr;). The strong voltage‐dependence of the photoresponse of a GaAs junction, which behaves like ap‐i‐njunction electrically, in the long wavelength region may result from the photoexcitation of electrons or holes to shallow levels in the pseudointrinsic region followed by some strongly field‐dependent ionization process, such as tunneling, etc.

ISSN:0021-8979    

DOI:10.1063/1.1702623

出版商:AIP    

年代:1963

数据来源: AIP

摘要:

Wear tests by sliding single crystals of calcium fluoride, sodium chloride, magnesium oxide, and lithium fluoride on their natural cleavage faces beneath a weighted indenter are described. The slip systems responsible for the resultant deformation were determined and details thereof studied microscopically with the aid of etchants to reveal dislocation etch pits. In calcium fluoride, the structure of the material in the wear track is interpreted as a damage structure called ``friction damage.'' Etching revealed clusters of point defects left behind by moving screw dislocations. Subsequent annealing in inert atmospheres produced microscopically visible cavities a short distance below the wear track. Their possible origin and role in surface deterioration and wear are discussed. In calcium fluoride, surface cracks emanating from the wear track lie along ordinary cleavage faces; in rock‐salt‐type crystals, however, they are interpreted as dislocation cracks on the dodecahedral planes.

ISSN:0021-8979    

DOI:10.1063/1.1702624

出版商:AIP    

年代:1963

数据来源: AIP

摘要:

In the solution of certain dislocation stress fields based on anisotropic elasticity, it is found that for −3>C>−4, whereCis an anisotropic factor of the crystal, the &sgr;xxfield of an edge dislocation is divided into six symmetric sectors of alternating tension and compression, in contrast to the usual case of half plane of tension and half plane of compression (C≥−3). The parameterCalso characterizes the &sgr;xyfield. ForC≥−2.5, there is a relative maximum on thexaxis as in the isotropic case. When −2.5>C>−4, the maximum changes to a relative minimum. The &sgr;yyfield is identical to &sgr;xyfield after a 90° rotation, and thus behaves similarly. Several consequences from these findings are discussed and examples are given.

ISSN:0021-8979    

DOI:10.1063/1.1702625

出版商:AIP    

年代:1963

数据来源: AIP

摘要:

A method is described for the controlled sublimation of tungsten wire at a temperature just below the melting point. Emission of electrons from the wire provides a sensitive indicator, which enables the operator to regulate the filament temperature by manual or automatic adjustment of the heating current.The wire is volatilized primarily by sublimation of metallic tungsten, not by oxidation.Some advantages of tungsten shadowing are considered.

ISSN:0021-8979    

DOI:10.1063/1.1702626

出版商:AIP    

年代:1963

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1702628

出版商:AIP    

年代:1963

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1702629

出版商:AIP    

年代:1963

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1702630

出版商:AIP    

年代:1963

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1702632

出版商:AIP    

年代:1963

数据来源: AIP