摘要:

A new method is presented for fabricating micron‐order, relief‐patterned silica glass using a sol‐gel process. The relief pattern is clearly replicated from a master pattern onto the silica glass surface. Gel shrinkage during fabrication makes it possible to obtain a reduced pattern in comparison with the master. The reduction ratio is in the range between 1/2 and 1/3. Using this method, an echelette grating with a period of 9.55 &mgr;m was successfully fabricated from the master grating, having a period of 20 &mgr;m.

ISSN:0021-8979    

DOI:10.1063/1.335236

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Diode characteristics of granular‐metal (GM)/n‐Si interfaces were investigated. The granular metal film (Pd or Pt/SiO2) was deposited by the ion‐beam sputtering technique. The diode characteristics were found to be influenced not only by the metal fraction in GM but also by the GM film thickness. Saturation current densityJsof the diodes under reverse bias condition showed a notable peak at the metal fraction in the range between 0.1 and 0.25, the maximum value being several orders of magnitude greater thanJsof a Pd‐Si Schottky barrier. Assuming that the increase inJsis fully caused by the barrier‐height lowering at the GM/Si interfaces, the amounts of barrier‐height lowerings were found to be 0.18 eV for 150‐A˚‐thick GM films and 0.22 eV for 600‐A˚‐thick GM films. Possible mechanisms for the barrier‐height lowering as well as the reason that the barrier height depends upon the GM films’s thickness were considered.

ISSN:0021-8979    

DOI:10.1063/1.335237

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

An epitaxial silicon film was successfully grown on a Si {100} substrate at the susceptor temperature of 730 °C in the SiH2Cl2/H2system. Irradiation with a mercury‐xenon (Hg‐Xe) lamp during deposition appeared to be essential for obtaining the epitaxial film. Surface cleaning in the experiment was done by preannealing the substrate in H2at 730 °C with Hg‐Xe lamp light irradiation. The film was characterized by etching, electron channeling pattern observation, Raman scattering spectroscopy, and spreading resistance measurement.

ISSN:0021-8979    

DOI:10.1063/1.335238

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Energy band structures ZnSe–ZnTe and ZnS0.5Se0.5–ZnTe superlattices are calculated using the Kronig‐Penney model taking into account strain effects due to the lattice mismatches between the materials. The ZnSe(30 A˚)–ZnTe(5 A˚) and the ZnS0.5Se0.5(30 A˚)–ZnTe(5 A˚) superlattices have energy gaps of 2.5 and 2.7 eV, respectively. The ZnS0.5Se0.5(30 A˚)–p‐type ZnTe(5 A˚) superlattice is considered to be ap‐type material of 1017cm−3and to be available for a hole injection layer to ann‐type ZnSe layer.

ISSN:0021-8979    

DOI:10.1063/1.335239

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Minority‐carrier diffusion lengths have been measured in electron‐beam‐induced current experiments with the electron beam of the scanning electron microscope both parallel and perpendicular to a Schottky barrier on single‐crystal silicon. Results from the two geometries are compared. The usefulness of the top surface geometry (beam perpendicular to the barrier) has been extended by measuring both the short‐circuit current and its derivative as a function of position, allowing the diffusion length to be calculated without knowing the exact position of the Schottky‐barrier edge. This is particularly useful when the barrier edge is indistinct, as often occurs for evaporated or sputtered barrier layers. Measurement of the derivative signal has been accomplished by position modulation of the scanning electron beam combined with a lock‐in amplifier for signal detection.

ISSN:0021-8979    

DOI:10.1063/1.335240

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

CuInSe2surfaces can be cleaned by bombardment with Ar ions at glancing incidence and with energies up to 1.5 keV without change in composition. At near‐normal incidence a slight depletion of Cu is observed. The surface crystallinity can be partially restored by annealing to ∼550 °C, without preferential evaporation of an element. On Ar+‐cleaned and annealed surfaces, single‐crystal low‐energy electron diffraction patterns of CuInSe2have been produced for the first time.

ISSN:0021-8979    

DOI:10.1063/1.335241

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

The effect of spin‐orbit interaction is included in the linear combination of atomic orbitals calculation of heterojunction band discontinuities. It is found that spin‐orbit interaction is not negligible when the atomic number of the constituent atoms exceeds about 40. The effect of spin‐orbit interaction as well as some interesting observations and their implications are briefly discussed.

ISSN:0021-8979    

DOI:10.1063/1.335242

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

The theoretical calculations for the diode quality factornfor a metal‐insulator‐n‐semiconductor solar cell under illumination are presented here. These calculations show that, under illumination,nincreases with increasingdand decreases slightly ford>18 A˚ atJL=36 mA cm−2. Results of the calculations compare well with experimental results observed by H. C. Card [Solid‐State Electron.20, 971 (1977)].

ISSN:0021-8979    

DOI:10.1063/1.335499

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

In a recent paper, Markworth and Glasser [J. Appl. Phys.54, 3508 (1983)] claimed to have generalized the Johnson–Mehl–Avrami [W. A. Johnson and R. F. Mehl, Trans. Am. Inst. Min. Metall. Eng.135, 416 (1939), and M. Avrami, J. Chem. Phys.7, 1103 (1939)] equation for the anisothermal case. It is argued that these authors did in fact use different rate equations for iso‐ and anisothermal kinetics. This procedure could lead to large errors in the kinetic parameters. A correct solution of the problem might be found in Henderson’s paper [J. Non‐Cryst. Solids30, 301 (1979)].

ISSN:0021-8979    

DOI:10.1063/1.335243

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

An experimental profile of  La implanted in a Ni crystal is theoretically described on the basis of a continuity equation for the La concentration, which includes a diffusive relocation of the implanted atoms and the matrix erosion velocity. The La sputtering process is explicitly considered by an appropriate boundary condition. The shape of the experimental La profile as well as the measured retained La dose has been well reproduced. It is shown that the erosion velocity of La atoms is greater than that of Ni atoms by a factor of 2.

ISSN:0021-8979    

DOI:10.1063/1.335191

出版商:AIP    

年代:1985

数据来源: AIP