摘要:

GaAs and GaP whisker crystals have been grown by the vapor—liquid—solid mechanism of crystal growth. Gold, palladium, platinum, and gallium have been used to produce the required liquid layer. The system employing wet hydrogen developed by Frosch and Thurmond was used for most of the crystal growing.p‐ andn‐type crystals were produced. GaAs crystals were found to have three morphologies: a twinned ribbon with a ⟨112⟩ growth direction and {111}, {110}, and {113} lateral faces; a single‐crystal hexagonal needle with a ⟨111⟩ growth direction and {110} lateral faces; and a newly found habit, a single‐crystal blade which grows in an ⟨001⟩ direction with {110} lateral faces. The largest GaAs blades were about 8×0.3 ×0.010 mm and grew at a rate of about 1 mm/h. The twinned ribbon and the ⟨001⟩, {110} morphologies were found in GaP.

ISSN:0021-8979    

DOI:10.1063/1.1714466

出版商:AIP    

年代:1965

数据来源: AIP

摘要:

The problem of the interaction of microwaves with a radially inhomogeneous plasma column confined by an impressed axial static magnetic field is treated analytically. Extensive numerical results for the backscattering cross sections are presented for various interesting ranges of the parameters involved. It is found that the often‐used homogeneous model for interpretation of experimental data can sometimes lead to ambiguous results. This ambiguity arises because of the interdependence of the average plasma frequency, the gyrofrequency, and the inhomogeneity of the plasma density distribution. Further measurements are suggested to distinguish these effects.

ISSN:0021-8979    

DOI:10.1063/1.1714467

出版商:AIP    

年代:1965

数据来源: AIP

摘要:

The equation of motion of positrons (or electrons) in an accelerating field and a focusing magnetic field is analyzed with relativistic effects included. An iterative procedure is used to solve the resulting nonlinear differential equation. An example is included to illustrate this technique; it is found that the assumptions involved are consistent with the numerical calculations. The feasibility of the proposed focusing scheme can be determined from the results obtained by this method of analysis.

ISSN:0021-8979    

DOI:10.1063/1.1714468

出版商:AIP    

年代:1965

数据来源: AIP

摘要:

Experimental techniques are described and data are presented on bending creep of single‐crystal MgO in vacuum from 800° to 1630°C. Evidence is discussed which supports the conclusion that creep near 1000°C is rate‐controlled by cross‐slip of screw dislocations with an activation energy of 1.5±0.25 eV. Creep above 1300°C takes place at a constant rate with an activation energy of 5.85±0.73 eV and a stress dependence exponent of 3. This creep is attributed to oxygen‐ion diffusion‐controlled climb of edge dislocations.The effect of an electric field to give a transient acceleration of the creep rate is described. Experiments to define and characterize this effect are described and discussed.

ISSN:0021-8979    

DOI:10.1063/1.1714469

出版商:AIP    

年代:1965

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1714471

出版商:AIP    

年代:1965

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1714472

出版商:AIP    

年代:1965

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1714473

出版商:AIP    

年代:1965

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1714474

出版商:AIP    

年代:1965

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1714475

出版商:AIP    

年代:1965

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1714476

出版商:AIP    

年代:1965

数据来源: AIP