摘要:

UV photochemical deposition of Sn films on GaAs (001) surfaces from a variety of tin‐containing compounds (tetramethyltin, tetrabutyltin, dibutyltin dibromide, stannic chloride, hexamethylditin, dibutyltin sulfide, and iodotrimethyltin) was studied. X‐ray photoelectron spectroscopy showed that during the initial stages of deposition from the halogenated compounds, the GaAs surface was photochemically etched, most likely by a halogen radical species. The photochemical etching resulted in an arsenic deficient surface which was particularly dramatic for the case of SnCl4. These results have important implications for the choice of sources for photochemical deposition when the metal‐semiconductor interface is important and for photochemical etching if stoichiometric surfaces are required.

ISSN:0021-8979    

DOI:10.1063/1.337043

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

⟨100⟩ textured polycrystalline silicon films deposited by low pressure chemical vapor deposition at 700 °C on SiO2/Si substrates have been amorphized by implantation with 100 keV28Si+ion at a dose of 2×1015/cm2and thermally annealed at 550 °C for 168 h. In a 0.15‐&mgr;m‐thick film, the larger grain growth (1.5 &mgr;m) occurred, and the ⟨100⟩ oriented grains were found. This fact implies a possibility of the ⟨100⟩ oriented and large silicon grains formation by seed selection through ion channeling technique even if the ⟨100⟩ textured polycrystalline silicon film with relatively small channeling yields is utilized.

ISSN:0021-8979    

DOI:10.1063/1.336831

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Absorption of a 633‐nm photon in a cylindrical nickel wire with diameter 13 &mgr;m was measured by a photoacoustic method as a function of angle of photon incidence &thgr;. A good photoacoustic signal was obtained with a 6‐mW He‐Ne laser as a light source without employing focusing optics. The absorption measured forp‐polarized photons was found to be in good agreement with geometrical optics calculation. Fors‐polarized light, however, significant excess absorption was found for &thgr;>35°.

ISSN:0021-8979    

DOI:10.1063/1.336833

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

It is shown that an exploding Eu foil target irradiated with 7.5×1013W/cm2should reach plasma parameters which look optimistic for soft x‐ray lasing. Among the lines of interest are two 4p‐4dtransitions near 100 A˚ and two near 80 A˚ with gains estimated at 4–7 cm−1.

ISSN:0021-8979    

DOI:10.1063/1.336834

出版商:AIP    

年代:1986

数据来源: AIP