摘要:

We have investigated the effects of boron doping on the electrical properties of glow‐discharge amorphous silicon (a‐Si:H) films prepared at a high‐deposition rate (HDR), comparing these effects with those of lower rates. The HDRa‐Si:H showed a higher doping efficiency, i.e., a larger portion of substitutionally doped boron than the other films by means of dark conductivity, activation energy measurements and quantitative analysis of boron. It also showed that the minimum B2H6to SiH4ratio which changes the film from intrinsic top‐type in photoconductivity is one order of magnitude smaller than that for dark conductivity.

ISSN:0021-8979    

DOI:10.1063/1.335914

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Plasma nitridation of silicon has been performed at low temperatures (at ≊500 °C and also lower temperatures) in nitrogen plasma generated by microwave discharge. The effects of various growth parameters such as microwave power, nitrogen gas pressure, anodization current and polarity, growth time and substrate temperature on the thickness, surface morphology, uniformity, composition and stoichiometry, and electrical and physical characteristics of the grown films have been studied. The thickness of the grown films varied between 30 and more than 100 A˚ depending on the growth conditions. Based on the grazing‐angle Rutherford‐backscattering data, the grown films were silicon nitride with some oxygen and carbon contamination. A typical breakdown field of ≊10 MV/cm was measured for these films. The preliminary results obtained indicate that these nitride films can be considered as potential candidates for ultrathin gate, tunnel, anddrammemory insulators for very large scale integration devices.

ISSN:0021-8979    

DOI:10.1063/1.335915

出版商:AIP    

年代:1985

数据来源: AIP