51. |
Structural and Electrical Properties of Flash‐Evaporated Thin GaAs Films |
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Journal of Applied Physics,
Volume 40,
Issue 13,
1969,
Page 5361-5367
M. R. Farukhi,
E. J. Charlson,
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摘要:
A flash‐evaporation scheme modified to control the rate of the powder fed to the evaporator was used for depositing GaAs films on amorphous glass substrates. A bulk wurtzite form of GaAs was identified with x‐ray diffraction and found to have an axial ratio of 1.684. Periodic faulting induced by the plunger movement of the powder feeder is believed to cause the formation of this phase. Structural analysis of the flash evaporated films was performed using a Fourier line broadening analysis and integral breadth measurements. A least‐squares approximation of the ``Warren‐Averbach'' method yielded particle sizes of 125 Å and rms microstrains of 0.0018. The films were doped during growth with germanium, indium and tin. Germanium doping producedp‐type films while both indium and tin doping producedn‐type. Mobilities greater than 0.5 cm2/V·sec were found for a narrow range of doping (1018−1019/cm3) for the tin doped films. The films grown with no auxiliary dopant werep‐type with carrier concentrations exceeding 1019/cm3and mobilities near 0.01 cm2/V·sec.
ISSN:0021-8979
DOI:10.1063/1.1657395
出版商:AIP
年代:1969
数据来源: AIP
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52. |
Numerical Integration of Plane Elastic‐Relaxing Plastic Shock Waves by a Two‐Step Method |
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Journal of Applied Physics,
Volume 40,
Issue 13,
1969,
Page 5368-5373
Y. Horie,
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摘要:
Hyperbolic equations with a differential constitutive relation of dynamic yielding are numerically integrated without the pseudoviscosity. The scheme is shown to be stable and the resulting shock profiles are smooth. The example of iron shows a good agreement with those of the viscosity method and suggests that a stable profile will emerge as mesh sizes decrease.
ISSN:0021-8979
DOI:10.1063/1.1657396
出版商:AIP
年代:1969
数据来源: AIP
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53. |
Epitaxial Poly‐ and Monocrystalline CaF2Films |
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Journal of Applied Physics,
Volume 40,
Issue 13,
1969,
Page 5373-5382
Marc Bujor,
R. W. Vook,
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摘要:
CaF2films were deposited onto (100) cleavage faces of NaCl in a high‐vacuum bell‐jar system. The dependence of structure on substrate temperature and film thickness was studied by transmission electron microscopy and diffraction. When the substrate temperature was around 350°C during deposition, a simple(100)CaF2&bigsl;&bigsl;(100)NaClwith〈110〉CaF2&bigsl;&bigsl;〈100〉NaClepitaxial monocrystalline orientation was found. Complex(110)CaF2&bigsl;&bigsl;(100)NaClwith average〈111〉CaF2&bigsl;&bigsl;〈100〉NaClepitaxial polycrystalline orientations were found when the substrate was in the 150°–250°C range during deposition. Hard‐sphere models of the CaF2and NaCl faces were used to interpret these results qualitatively.
ISSN:0021-8979
DOI:10.1063/1.1657397
出版商:AIP
年代:1969
数据来源: AIP
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54. |
Optical Properties of Island Films of Metals at Long Wavelengths |
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Journal of Applied Physics,
Volume 40,
Issue 13,
1969,
Page 5383-5386
J. P. Marton,
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摘要:
In the Drude approximation, and for long wavelengths, the real partnof the complex indexn˜=n−ikof island films of metals is shown to be independent of the electronic properties of the parent metal, and of the wavelength of radiation. The value of the index is found to depend on the Maxwell Garnett density parameterqonly, and is always greater than one, in agreement with experimental results.
ISSN:0021-8979
DOI:10.1063/1.1657398
出版商:AIP
年代:1969
数据来源: AIP
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55. |
Shape of Modulation‐Broadened, Unsaturated, Lorentzian Magnetic Resonance Transitions: A Theoretical and Experimental Study of the Fourier CoefficientaoL |
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Journal of Applied Physics,
Volume 40,
Issue 13,
1969,
Page 5386-5389
H. A. Buckmaster,
J. D. Skirrow,
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摘要:
The effect of modulation broadening on the shape of the Fourier coefficientaoLdescribing an unsaturated, Lorentzian absorption line is examined theoretically and experimentally. An unusual feature, not previously observed, is the development of two equal maxima when the normalized modulation amplitude (1/&bgr;) exceeds (2)1/2. Expressions are derived for the position and amplitude of these maxima as a function of (1/&bgr;). Experimental evidence confirming these expressions is presented.
ISSN:0021-8979
DOI:10.1063/1.1657399
出版商:AIP
年代:1969
数据来源: AIP
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56. |
Hydrogen Adsorption of the (110), (112), (100), and (111) Tungsten Single‐Crystal Faces |
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Journal of Applied Physics,
Volume 40,
Issue 13,
1969,
Page 5390-5391
R. A. Collins,
B. H. Blott,
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ISSN:0021-8979
DOI:10.1063/1.1657400
出版商:AIP
年代:1969
数据来源: AIP
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57. |
K‐Shell Photoelectric Cross Sections |
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Journal of Applied Physics,
Volume 40,
Issue 13,
1969,
Page 5391-5392
B. V. Narasimha Rao,
K. Parthasaradhi,
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ISSN:0021-8979
DOI:10.1063/1.1657401
出版商:AIP
年代:1969
数据来源: AIP
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58. |
Temperature Dependence of Ionization Rates in GaAs |
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Journal of Applied Physics,
Volume 40,
Issue 13,
1969,
Page 5392-5394
Y. J. Chang,
S. M. Sze,
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ISSN:0021-8979
DOI:10.1063/1.1657402
出版商:AIP
年代:1969
数据来源: AIP
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59. |
Collision Frequency and Axial Inhomogeneity Effects on Average Plasma Conductivity by rf Probes |
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Journal of Applied Physics,
Volume 40,
Issue 13,
1969,
Page 5394-5396
M. Ciampi,
N. Talini,
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ISSN:0021-8979
DOI:10.1063/1.1657403
出版商:AIP
年代:1969
数据来源: AIP
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60. |
Low Energy Metal‐Glass Bonding |
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Journal of Applied Physics,
Volume 40,
Issue 13,
1969,
Page 5396-5397
P. B. DeNee,
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ISSN:0021-8979
DOI:10.1063/1.1657405
出版商:AIP
年代:1969
数据来源: AIP
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