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| 51. |
Band‐structure dependence of impact ionization rate in GaAs |
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Journal of Applied Physics,
Volume 59,
Issue 7,
1986,
Page 2595-2596
K. Kim,
K. Kahen,
J. P. Leburton,
K. Hess,
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摘要:
The band‐structure dependence of the electron impact ionization rate in GaAs is studied by using local and nonlocal pseudopotential band structures and a Monte Carlo simulation code for the impact ionization rate &agr;. We find that the difference in &agr; for the two band structures reflects mainly the difference in the density of states.
ISSN:0021-8979
DOI:10.1063/1.337011
出版商:AIP
年代:1986
数据来源: AIP
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| 52. |
Erratum: ‘‘Acoustic microscopy of materials and surface layers’’ [J. Appl. Phys.55, 3261 (1984)] |
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Journal of Applied Physics,
Volume 59,
Issue 7,
1986,
Page 2597-2597
R. G. Wilson,
R. D. Weglein,
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PDF (55KB)
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ISSN:0021-8979
DOI:10.1063/1.337016
出版商:AIP
年代:1986
数据来源: AIP
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