Journal of Applied Physics


ISSN: 0021-8979        年代:1965
当前卷期:Volume 36  issue 2     [ 查看所有卷期 ]

年代:1965
 
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51. Anion Diffusion in Crystals of NaCl
  Journal of Applied Physics,   Volume  36,   Issue  2,   1965,   Page  624-631

L. W. Barr,   J. A. Morrison,   P. A. Schroeder,  

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52. Stability of the Shape of a Solid Cylinder Growing in a Diffusion Field
  Journal of Applied Physics,   Volume  36,   Issue  2,   1965,   Page  632-637

Sam R. Coriell,   Robert L. Parker,  

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53. Theory of the Interaction of Vacancies with Stress Fields in Metals. II. The Interaction between Vacancies and Dislocations
  Journal of Applied Physics,   Volume  36,   Issue  2,   1965,   Page  637-646

D. Kuhlmann‐Wilsdorf,  

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54. Reply to the Remark by E. L. Shtrum on the AgFeTe2Semiconductor ``Compound.'' II
  Journal of Applied Physics,   Volume  36,   Issue  2,   1965,   Page  647-648

P. Manca,   F. Massazza,  

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55. Low‐Temperature Flux Reversal in Ferrite
  Journal of Applied Physics,   Volume  36,   Issue  2,   1965,   Page  648-649

W. B. Suiter,  

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56. Frictional Interaction of Indium Surfaces
  Journal of Applied Physics,   Volume  36,   Issue  2,   1965,   Page  649-650

M. Cocks,  

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57. Semiclassical Calculation of Inelastic Cross Sections for Electron—Cesium Atomic Collisions
  Journal of Applied Physics,   Volume  36,   Issue  2,   1965,   Page  650-651

John W. Sheldon,   John V. Dugan,  

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58. Determination of External Surface Area of Porous Solids by Monomolecular Films
  Journal of Applied Physics,   Volume  36,   Issue  2,   1965,   Page  651-652

Harold Schonhorn,   Harry P. Gregor,  

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59. Effect of Scattering on Charge Transfer Efficiency Measurements: Comment on a Paper by Mahadevanet al.
  Journal of Applied Physics,   Volume  36,   Issue  2,   1965,   Page  652-653

J. R. Peterson,  

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60. A Remark on the Semiconducting Compound ``AgFeTe2''
  Journal of Applied Physics,   Volume  36,   Issue  2,   1965,   Page  653-653

K. Deneke,  

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